Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces

Jie Shan, T. F. Heinz, C. Weiss, R. Wallenstein, R. Beigang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Summary form only given. A common method for the generation of THz radiation utilizes the transient currents produced in the depletion layer of a semiconductor surface by irradiation with an ultrafast laser pulse. Recently there have been several experimental demonstrations of the possibility of strongly increasing the efficiency of this emission process by the application of a static magnetic field. Since the first report of this effect, the Lorentz force has been evoked to explain the phenomenon. Still, to date, no simple model has been developed capable of predicting the large enhancements seen experimentally. We present a theoretical model of this phenomena.

Original languageEnglish (US)
Title of host publicationTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages46-47
Number of pages2
ISBN (Electronic)155752663X, 9781557526632
DOIs
StatePublished - Jan 1 2001
EventQuantum Electronics and Laser Science Conference, QELS 2001 - Baltimore, United States
Duration: May 6 2001May 11 2001

Publication series

NameTechnical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001

Other

OtherQuantum Electronics and Laser Science Conference, QELS 2001
CountryUnited States
CityBaltimore
Period5/6/015/11/01

Fingerprint

Semiconductor materials
Magnetic fields
Radiation
Ultrafast lasers
Lorentz force
augmentation
radiation
magnetic fields
Laser pulses
depletion
Demonstrations
Irradiation
irradiation
pulses
lasers

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Radiation

Cite this

Shan, J., Heinz, T. F., Weiss, C., Wallenstein, R., & Beigang, R. (2001). Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001 (pp. 46-47). [961830] (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/QELS.2001.961830
Shan, Jie ; Heinz, T. F. ; Weiss, C. ; Wallenstein, R. ; Beigang, R. / Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces. Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. pp. 46-47 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001).
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Shan, J, Heinz, TF, Weiss, C, Wallenstein, R & Beigang, R 2001, Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces. in Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001., 961830, Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001, Institute of Electrical and Electronics Engineers Inc., pp. 46-47, Quantum Electronics and Laser Science Conference, QELS 2001, Baltimore, United States, 5/6/01. https://doi.org/10.1109/QELS.2001.961830

Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces. / Shan, Jie; Heinz, T. F.; Weiss, C.; Wallenstein, R.; Beigang, R.

Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc., 2001. p. 46-47 961830 (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - Summary form only given. A common method for the generation of THz radiation utilizes the transient currents produced in the depletion layer of a semiconductor surface by irradiation with an ultrafast laser pulse. Recently there have been several experimental demonstrations of the possibility of strongly increasing the efficiency of this emission process by the application of a static magnetic field. Since the first report of this effect, the Lorentz force has been evoked to explain the phenomenon. Still, to date, no simple model has been developed capable of predicting the large enhancements seen experimentally. We present a theoretical model of this phenomena.

AB - Summary form only given. A common method for the generation of THz radiation utilizes the transient currents produced in the depletion layer of a semiconductor surface by irradiation with an ultrafast laser pulse. Recently there have been several experimental demonstrations of the possibility of strongly increasing the efficiency of this emission process by the application of a static magnetic field. Since the first report of this effect, the Lorentz force has been evoked to explain the phenomenon. Still, to date, no simple model has been developed capable of predicting the large enhancements seen experimentally. We present a theoretical model of this phenomena.

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Shan J, Heinz TF, Weiss C, Wallenstein R, Beigang R. Origin of magnetic field enhancement in the generation of THz radiation from semiconductor surfaces. In Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001. Institute of Electrical and Electronics Engineers Inc. 2001. p. 46-47. 961830. (Technical Digest - Summaries of Papers Presented at the Quantum Electronics and Laser Science Conference, QELS 2001). https://doi.org/10.1109/QELS.2001.961830