Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks

Gennadi Bersuker, Chang Seo Park, Huang Chun Wen, K. Choi, Jimmy Price, Patrick Lysaght, Hsing Huang Tseng, O. Sharia, Alex Demkov, Jason T. Ryan, P. Lenahan

Research output: Contribution to journalArticle

40 Scopus citations

Abstract

The effect of flatband-voltage reduction [roll-off (R-O)], which limits fabrication options for obtaining the needed band-edge threshold voltage values in transistors with highly scaled metal/high- k dielectric gate stacks, is discussed. The proposed mechanism causing this R-O phenomenon is suggested to be associated with the generation of positively charged oxygen vacancies in the interfacial SiO2 layer next to the Si substrate. The vacancies in the interfacial layer are induced by oxygen outdiffusing into the overlying high- k dielectric. The model is consistent with the variety of observations of R-O dependence on the electrode and substrate type, high- k dielectric composition and thickness, temperature, etc. The model's predictions were experimentally verified.

Original languageEnglish (US)
Article number5552226
Pages (from-to)2047-2056
Number of pages10
JournalIEEE Transactions on Electron Devices
Volume57
Issue number9
DOIs
StatePublished - Sep 1 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Bersuker, G., Park, C. S., Wen, H. C., Choi, K., Price, J., Lysaght, P., Tseng, H. H., Sharia, O., Demkov, A., Ryan, J. T., & Lenahan, P. (2010). Origin of the flatband-voltage roll-off phenomenon in metal/high-k gate stacks. IEEE Transactions on Electron Devices, 57(9), 2047-2056. [5552226]. https://doi.org/10.1109/TED.2010.2051863