Origin of the turn-on temperature behavior in WTe2

Y. L. Wang, L. R. Thoutam, Z. L. Xiao, J. Hu, Saptarshi Das, Zhiqiang Mao, J. Wei, R. Divan, A. Luican-Mayer, G. W. Crabtree, W. K. Kwok

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Abstract

A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative turn-on temperature behavior: when the applied magnetic field H is above certain value, the resistivity versus temperature ρ(T) curve shows a minimum at a field dependent temperature T∗, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that ρ(T) curves with turn-on behavior in the newly discovered XMR material WTe2 can be scaled as MR∼(H/ρ0)m with m≈2 and ρ0 being the resistivity at zero field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature T∗∼(H-Hc)ν with ν≈1/2, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity ρ∗≈2ρ0 at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe2. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.

Original languageEnglish (US)
Article number180402
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume92
Issue number18
DOIs
StatePublished - Nov 3 2015

Fingerprint

Metal insulator transition
insulators
magnetic fields
Magnetic fields
electrical resistivity
metals
electronic structure
scaling
Temperature
Electronic structure
temperature
curves
routes
Magnetoresistance
temperature dependence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Wang, Y. L. ; Thoutam, L. R. ; Xiao, Z. L. ; Hu, J. ; Das, Saptarshi ; Mao, Zhiqiang ; Wei, J. ; Divan, R. ; Luican-Mayer, A. ; Crabtree, G. W. ; Kwok, W. K. / Origin of the turn-on temperature behavior in WTe2. In: Physical Review B - Condensed Matter and Materials Physics. 2015 ; Vol. 92, No. 18.
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abstract = "A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative turn-on temperature behavior: when the applied magnetic field H is above certain value, the resistivity versus temperature ρ(T) curve shows a minimum at a field dependent temperature T∗, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that ρ(T) curves with turn-on behavior in the newly discovered XMR material WTe2 can be scaled as MR∼(H/ρ0)m with m≈2 and ρ0 being the resistivity at zero field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature T∗∼(H-Hc)ν with ν≈1/2, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity ρ∗≈2ρ0 at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe2. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.",
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Wang, YL, Thoutam, LR, Xiao, ZL, Hu, J, Das, S, Mao, Z, Wei, J, Divan, R, Luican-Mayer, A, Crabtree, GW & Kwok, WK 2015, 'Origin of the turn-on temperature behavior in WTe2', Physical Review B - Condensed Matter and Materials Physics, vol. 92, no. 18, 180402. https://doi.org/10.1103/PhysRevB.92.180402

Origin of the turn-on temperature behavior in WTe2. / Wang, Y. L.; Thoutam, L. R.; Xiao, Z. L.; Hu, J.; Das, Saptarshi; Mao, Zhiqiang; Wei, J.; Divan, R.; Luican-Mayer, A.; Crabtree, G. W.; Kwok, W. K.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 92, No. 18, 180402, 03.11.2015.

Research output: Contribution to journalArticle

TY - JOUR

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AU - Wang, Y. L.

AU - Thoutam, L. R.

AU - Xiao, Z. L.

AU - Hu, J.

AU - Das, Saptarshi

AU - Mao, Zhiqiang

AU - Wei, J.

AU - Divan, R.

AU - Luican-Mayer, A.

AU - Crabtree, G. W.

AU - Kwok, W. K.

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N2 - A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative turn-on temperature behavior: when the applied magnetic field H is above certain value, the resistivity versus temperature ρ(T) curve shows a minimum at a field dependent temperature T∗, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that ρ(T) curves with turn-on behavior in the newly discovered XMR material WTe2 can be scaled as MR∼(H/ρ0)m with m≈2 and ρ0 being the resistivity at zero field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature T∗∼(H-Hc)ν with ν≈1/2, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity ρ∗≈2ρ0 at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe2. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.

AB - A hallmark of materials with extremely large magnetoresistance (XMR) is the transformative turn-on temperature behavior: when the applied magnetic field H is above certain value, the resistivity versus temperature ρ(T) curve shows a minimum at a field dependent temperature T∗, which has been interpreted as a magnetic-field-driven metal-insulator transition or attributed to an electronic structure change. Here, we demonstrate that ρ(T) curves with turn-on behavior in the newly discovered XMR material WTe2 can be scaled as MR∼(H/ρ0)m with m≈2 and ρ0 being the resistivity at zero field. We obtained experimentally and also derived from the observed scaling the magnetic field dependence of the turn-on temperature T∗∼(H-Hc)ν with ν≈1/2, which was earlier used as evidence for a predicted metal-insulator transition. The scaling also leads to a simple quantitative expression for the resistivity ρ∗≈2ρ0 at the onset of the XMR behavior, which fits the data remarkably well. These results exclude the possible existence of a magnetic-field-driven metal-insulator transition or significant contribution of an electronic structure change to the low-temperature XMR in WTe2. This work resolves the origin of the turn-on behavior observed in several XMR materials and also provides a general route for a quantitative understanding of the temperature dependence of MR in both XMR and non-XMR materials.

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