Ortho-para conversion of H2 in crystalline silicon

Roger M. Herman, Alejandro Suarez, Jorge Osvaldo Sofo, John Courtenay Lewis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

The ortho-para conversion rate of H2 in crystalline p doped silicon is calculated assuming that the conversion is due to the unpaired electron spins associated with holes with the electron spin density at the H2 nuclei being enhanced through spin exchange effects.

Original languageEnglish (US)
Title of host publication20th International Conference on Spectral Line Shapes, ICSLS
Pages284-288
Number of pages5
DOIs
StatePublished - Dec 13 2010
Event20th International Conference on Spectral Line Shapes, ICSLS - St. John's, NL, Canada
Duration: Jun 6 2010Jun 11 2010

Publication series

NameAIP Conference Proceedings
Volume1290
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other20th International Conference on Spectral Line Shapes, ICSLS
CountryCanada
CitySt. John's, NL
Period6/6/106/11/10

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Herman, R. M., Suarez, A., Sofo, J. O., & Lewis, J. C. (2010). Ortho-para conversion of H2 in crystalline silicon. In 20th International Conference on Spectral Line Shapes, ICSLS (pp. 284-288). (AIP Conference Proceedings; Vol. 1290). https://doi.org/10.1063/1.3517574