Oscillatory crossover from two-dimensional to three-dimensional topological insulators

Chaoxing Liu, Haijun Zhang, Binghai Yan, Xiao Liang Qi, Thomas Frauenheim, Xi Dai, Zhong Fang, Shou Cheng Zhang

Research output: Contribution to journalArticle

318 Citations (Scopus)

Abstract

We investigate the crossover regime from three-dimensional topological insulators Bi2 Te3 and Bi2 Se3 to two-dimensional topological insulators with quantum spin Hall effect when the layer thickness is reduced. Using both analytical models and first-principles calculations, we find that the crossover occurs in an oscillatory fashion as a function of the layer thickness, alternating between topologically trivial and nontrivial two-dimensional behavior.

Original languageEnglish (US)
Article number041307
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number4
DOIs
StatePublished - Jan 19 2010

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crossovers
Spin Hall effect
insulators
Quantum Hall effect
Hall effect
Analytical models

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Liu, Chaoxing ; Zhang, Haijun ; Yan, Binghai ; Qi, Xiao Liang ; Frauenheim, Thomas ; Dai, Xi ; Fang, Zhong ; Zhang, Shou Cheng. / Oscillatory crossover from two-dimensional to three-dimensional topological insulators. In: Physical Review B - Condensed Matter and Materials Physics. 2010 ; Vol. 81, No. 4.
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Oscillatory crossover from two-dimensional to three-dimensional topological insulators. / Liu, Chaoxing; Zhang, Haijun; Yan, Binghai; Qi, Xiao Liang; Frauenheim, Thomas; Dai, Xi; Fang, Zhong; Zhang, Shou Cheng.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 4, 041307, 19.01.2010.

Research output: Contribution to journalArticle

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AU - Dai, Xi

AU - Fang, Zhong

AU - Zhang, Shou Cheng

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