Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

P. Sivasubramani, M. J. Kim, B. E. Gnade, R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft, J. P. Maria

Research output: Contribution to journalArticle

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Abstract

We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

Original languageEnglish (US)
Article number201901
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number20
DOIs
StatePublished - May 16 2005

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polishing
secondary ion mass spectrometry
x ray diffraction
thermal stability
penetration
atomic force microscopy
crystallization
transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Sivasubramani, P., Kim, M. J., Gnade, B. E., Wallace, R. M., Edge, L. F., Schlom, D. G., ... Maria, J. P. (2005). Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001). Applied Physics Letters, 86(20), 1-3. [201901]. https://doi.org/10.1063/1.1928316
Sivasubramani, P. ; Kim, M. J. ; Gnade, B. E. ; Wallace, R. M. ; Edge, L. F. ; Schlom, D. G. ; Craft, H. S. ; Maria, J. P. / Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001). In: Applied Physics Letters. 2005 ; Vol. 86, No. 20. pp. 1-3.
@article{5c75abc9b28e4e9883d8f3816591fd4f,
title = "Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)",
abstract = "We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.",
author = "P. Sivasubramani and Kim, {M. J.} and Gnade, {B. E.} and Wallace, {R. M.} and Edge, {L. F.} and Schlom, {D. G.} and Craft, {H. S.} and Maria, {J. P.}",
year = "2005",
month = "5",
day = "16",
doi = "10.1063/1.1928316",
language = "English (US)",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

Sivasubramani, P, Kim, MJ, Gnade, BE, Wallace, RM, Edge, LF, Schlom, DG, Craft, HS & Maria, JP 2005, 'Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)', Applied Physics Letters, vol. 86, no. 20, 201901, pp. 1-3. https://doi.org/10.1063/1.1928316

Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001). / Sivasubramani, P.; Kim, M. J.; Gnade, B. E.; Wallace, R. M.; Edge, L. F.; Schlom, D. G.; Craft, H. S.; Maria, J. P.

In: Applied Physics Letters, Vol. 86, No. 20, 201901, 16.05.2005, p. 1-3.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

AU - Sivasubramani, P.

AU - Kim, M. J.

AU - Gnade, B. E.

AU - Wallace, R. M.

AU - Edge, L. F.

AU - Schlom, D. G.

AU - Craft, H. S.

AU - Maria, J. P.

PY - 2005/5/16

Y1 - 2005/5/16

N2 - We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

AB - We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

UR - http://www.scopus.com/inward/record.url?scp=20944439392&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20944439392&partnerID=8YFLogxK

U2 - 10.1063/1.1928316

DO - 10.1063/1.1928316

M3 - Article

AN - SCOPUS:20944439392

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 201901

ER -

Sivasubramani P, Kim MJ, Gnade BE, Wallace RM, Edge LF, Schlom DG et al. Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001). Applied Physics Letters. 2005 May 16;86(20):1-3. 201901. https://doi.org/10.1063/1.1928316