Outdiffusion of la and Al from amorphous LaAlO3 in direct contact with Si (001)

P. Sivasubramani, M. J. Kim, B. E. Gnade, R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft, J. P. Maria

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Abstract

We have evaluated the thermal stability of Al2O3 / LaAlO3 /Si (001) stacks with atomic force microscopy, x-ray diffraction, transmission electron microscopy, and secondary ion mass spectrometry using a back side polishing approach. Crystallization of the amorphous LaAlO3 film was found to occur for rapid thermal anneals (RTA) above 935 °C for 20 s, in flowing N2. Penetration of Al and La into the underlying Si (001) is clearly observed for RTA at or above 950 °C for 20 s in flowing N2.

Original languageEnglish (US)
Article number201901
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number20
DOIs
StatePublished - May 16 2005

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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