Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition

K. Tankala, T. DebRoy, M. Alam

Research output: Contribution to journalArticle

46 Citations (Scopus)

Abstract

Oxidation of polycrystalline diamond films on (111) Si wafers in air at temperatures up to 1073 K was investigated by thermogravimetry. The diamond films before and after partial oxidation were characterized by optical and scanning electron microscopy, x-ray, infrared, and Raman spectroscopy. The oxidation of synthetic diamond films started at a lower temperature than that for natural diamond. The rates of oxidation of the diamond films synthesized by the hot filament and the microwave plasma methods were intermediate between the rates of oxidation of the 111 and 100 planes of natural diamond crystals. The apparent activation energy for the oxidation of the synthetic diamond films agreed well with that for the oxidation of natural diamond via diamond to graphite transition at low oxygen pressures.

Original languageEnglish (US)
Pages (from-to)2483-2489
Number of pages7
JournalJournal of Materials Research
Volume5
Issue number11
DOIs
StatePublished - Nov 1990

Fingerprint

Diamond films
diamond films
Chemical vapor deposition
filaments
vapor deposition
Diamond
Oxidation
oxidation
Diamonds
diamonds
Synthetic diamonds
Graphite
thermogravimetry
x ray spectroscopy
Raman spectroscopy
Thermogravimetric analysis
Infrared spectroscopy
graphite
Activation energy
infrared spectroscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "Oxidation of polycrystalline diamond films on (111) Si wafers in air at temperatures up to 1073 K was investigated by thermogravimetry. The diamond films before and after partial oxidation were characterized by optical and scanning electron microscopy, x-ray, infrared, and Raman spectroscopy. The oxidation of synthetic diamond films started at a lower temperature than that for natural diamond. The rates of oxidation of the diamond films synthesized by the hot filament and the microwave plasma methods were intermediate between the rates of oxidation of the 111 and 100 planes of natural diamond crystals. The apparent activation energy for the oxidation of the synthetic diamond films agreed well with that for the oxidation of natural diamond via diamond to graphite transition at low oxygen pressures.",
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Oxidation of diamond films synthesized by hot filament assisted chemical vapor deposition. / Tankala, K.; DebRoy, T.; Alam, M.

In: Journal of Materials Research, Vol. 5, No. 11, 11.1990, p. 2483-2489.

Research output: Contribution to journalArticle

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AB - Oxidation of polycrystalline diamond films on (111) Si wafers in air at temperatures up to 1073 K was investigated by thermogravimetry. The diamond films before and after partial oxidation were characterized by optical and scanning electron microscopy, x-ray, infrared, and Raman spectroscopy. The oxidation of synthetic diamond films started at a lower temperature than that for natural diamond. The rates of oxidation of the diamond films synthesized by the hot filament and the microwave plasma methods were intermediate between the rates of oxidation of the 111 and 100 planes of natural diamond crystals. The apparent activation energy for the oxidation of the synthetic diamond films agreed well with that for the oxidation of natural diamond via diamond to graphite transition at low oxygen pressures.

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