Oxidation of silicon nanowires

D. Shir, B. Z. Liu, A. M. Mohammad, K. K. Lew, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

68 Scopus citations


Silicon nanowires have received attention for nanoscale electronic devices and chemical and biological sensors. The thermal oxide grown on the silicon nanowires could be used in a variety of devices, so the oxidation of the silicon nanowires is investigated in this work. Silicon nanowires with an average radius of 37 nm were grown for these experiments using the vapor-liquid-solid technique with Au to mediate the growth. Etching of the Au tips from the silicon nanowires was performed prior to oxidation to avoid local accelerated oxidation at the nanowire tip. Oxidation was performed at 700 °C for 1-121 h and at 650 and 750 °C for 4 h in O2, and the oxidized nanowires were examined by transmission electron microscopy. Depending on the conditions for oxidation, an oxide shell as thin as 6 nm was observed, or the entire nanowire was oxidized. The kinetics of oxidation differ from those of a planar silicon wafer and are discussed in this work.

Original languageEnglish (US)
Pages (from-to)1333-1336
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number3
StatePublished - May 2006

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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