Oxidation of silicon nanowires for top-gated field effect transistors

Bangzhi Liu, Yanfeng Wang, Tsung Ta Ho, Kok Keong Lew, Sarah M. Eichfeld, Joan Marie Redwing, Theresa S. Mayer, Suzanne E. Mohney

Research output: Contribution to journalArticle

31 Citations (Scopus)

Abstract

The oxidation of unintentionally doped p -type silicon nanowires grown by the vapor-liquid-solid (VLS) method and their integration into top-gated field effect transistors is reported. Dry thermal oxidation of as-grown silicon nanowires with diameters ranging from 20 to 400 nm was carried out at 700 and 900 °C with or without the addition of a chlorinated gas source. The oxidation rate was strongly dependent on the as-grown nanowire diameter, with the large-diameter nanowires oxidizing up to five times faster than the smallest nanowires at 900 °C. At each diameter, the addition of trichloroethane (TCA) enhanced the rate compared to oxidation in pure O2. Top-gated field effect transistors fabricated from nanowires oxidized at 700 °C had significantly less hysteresis in their subthreshold properties when TCA was added, but oxidation at 900 °C with or without TCA provided hysteresis-free devices with improved subthreshold slope. Such enhancements in the electrical properties are expected based on advances in planar silicon process technology and emphasizes the importance of incorporating these techniques for VLS-grown nanowire devices.

Original languageEnglish (US)
Pages (from-to)370-374
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume26
Issue number3
DOIs
StatePublished - May 8 2008

Fingerprint

Silicon
Field effect transistors
Nanowires
nanowires
field effect transistors
Oxidation
Trichloroethanes
oxidation
silicon
Hysteresis
hysteresis
Vapors
vapors
Liquids
liquids
Electric properties
Gases
electrical properties
slopes
augmentation

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Liu, Bangzhi ; Wang, Yanfeng ; Ho, Tsung Ta ; Lew, Kok Keong ; Eichfeld, Sarah M. ; Redwing, Joan Marie ; Mayer, Theresa S. ; Mohney, Suzanne E. / Oxidation of silicon nanowires for top-gated field effect transistors. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2008 ; Vol. 26, No. 3. pp. 370-374.
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Oxidation of silicon nanowires for top-gated field effect transistors. / Liu, Bangzhi; Wang, Yanfeng; Ho, Tsung Ta; Lew, Kok Keong; Eichfeld, Sarah M.; Redwing, Joan Marie; Mayer, Theresa S.; Mohney, Suzanne E.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 26, No. 3, 08.05.2008, p. 370-374.

Research output: Contribution to journalArticle

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