Oxidation resistant sol-gel derived silicon oxynitride thin films

Richard K. Brow, Carlo G. Pantano

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

Original languageEnglish (US)
Pages (from-to)27-29
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number1
DOIs
StatePublished - Dec 1 1986

Fingerprint

oxynitrides
gels
oxidation
silicon
thin films
oxidation resistance
secondary ion mass spectrometry
ellipsometry
ammonia
silicon dioxide
nitrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Brow, Richard K. ; Pantano, Carlo G. / Oxidation resistant sol-gel derived silicon oxynitride thin films. In: Applied Physics Letters. 1986 ; Vol. 48, No. 1. pp. 27-29.
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Oxidation resistant sol-gel derived silicon oxynitride thin films. / Brow, Richard K.; Pantano, Carlo G.

In: Applied Physics Letters, Vol. 48, No. 1, 01.12.1986, p. 27-29.

Research output: Contribution to journalArticle

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