Oxidation resistant sol-gel derived silicon oxynitride thin films

Richard K. Brow, Carlo G. Pantano

Research output: Contribution to journalArticle

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Abstract

Silicon oxynitride films, made by reacting porous, sol-gel derived silicon dioxide with ammonia, were oxidized in dry O2 between 800 and 1000°C. Film oxidation was characterized by ellipsometry and secondary ion mass spectrometry. Increasing the nitrogen content of the film increased oxidation resistance of the film.

Original languageEnglish (US)
Pages (from-to)27-29
Number of pages3
JournalApplied Physics Letters
Volume48
Issue number1
DOIs
StatePublished - Dec 1 1986

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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