Oxide semiconductor thin film transistors on thin solution-cast flexible substrates

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We report ZnO thin-film transistors (TFTs) fabricated on solution-cast thin polyimide flexible substrates. Plasma-enhanced atomic layer deposition was used to deposit ZnO semiconductor and Al2O3 dielectric layers and the highest processing temperature used was 200 °C. The TFTs fabricated on thin polyimide substrates have characteristics very similar to devices fabricated on glass substrates and device characteristics changed little with release from the casting substrate. Typical TFT mobility was >12 cm2 vs for a gate electric field of 2 MV/cm. Released substrates with the TFTs were flexed between 3.5-mm radius and flat for 50000 cycles with little change in device characteristics. These results demonstrate solution casting of thin polymer layer substrates as a simple path to oxide semiconductor flexible electronics.

Original languageEnglish (US)
Article number6957528
Pages (from-to)35-37
Number of pages3
JournalIEEE Electron Device Letters
Volume36
Issue number1
DOIs
StatePublished - Jan 1 2015

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Thin film transistors
Substrates
Polyimides
Casting
Flexible electronics
Atomic layer deposition
Oxide semiconductors
Polymers
Deposits
Electric fields
Semiconductor materials
Plasmas
Glass
Processing

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Oxide semiconductor thin film transistors on thin solution-cast flexible substrates. / Li, Haoyu U.; Jackson, Thomas Nelson.

In: IEEE Electron Device Letters, Vol. 36, No. 1, 6957528, 01.01.2015, p. 35-37.

Research output: Contribution to journalArticle

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AB - We report ZnO thin-film transistors (TFTs) fabricated on solution-cast thin polyimide flexible substrates. Plasma-enhanced atomic layer deposition was used to deposit ZnO semiconductor and Al2O3 dielectric layers and the highest processing temperature used was 200 °C. The TFTs fabricated on thin polyimide substrates have characteristics very similar to devices fabricated on glass substrates and device characteristics changed little with release from the casting substrate. Typical TFT mobility was >12 cm2 vs for a gate electric field of 2 MV/cm. Released substrates with the TFTs were flexed between 3.5-mm radius and flat for 50000 cycles with little change in device characteristics. These results demonstrate solution casting of thin polymer layer substrates as a simple path to oxide semiconductor flexible electronics.

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