Problems connected with the introduction of very thin oxide films in the technology of MOS-VLSI circuits are considered. Reasons are given for the reduction of dielectric thickness in order to improve parameters of MOS circuits. Effects causing degradation of parameters of devices with very thin dielectrics are discussed, along with limitations resulting from injection of hot carriers and density increase of defects causing breakdown of the oxide.
|Translated title of the contribution||Oxide Thin Films for MOS VLSI Circuits.|
|Number of pages||5|
|State||Published - Dec 1 1984|
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