Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO3/Pt thin-film capacitors

Mingrong Shen, Zhenggao Dong, Zhaoqiang Gan, Shuibing Ge, Wenwu Cao

Research output: Contribution to journalArticlepeer-review

36 Scopus citations

Abstract

The leakage characteristics and dielectric properties of Pt/(Ba,Sr)TiO 3/Pt thin-film capacitors were found to be remarkably sensitive to the postannealing temperature in oxygen and nitrogen atmosphere. High leakage currents and low-frequency dielectric relaxation were found in as-deposited capacitors after they had been postannealed in nitrogen at 550°C and subsequently annealed in oxygen at 350°C. Such results are related to the mobile oxygen ions and oxygen vacancies accumulated in the (Ba,Sr)TiO 3 films. The chemical process of the formation of charged oxygen ions during postannealing is proposed.

Original languageEnglish (US)
Pages (from-to)2538-2540
Number of pages3
JournalApplied Physics Letters
Volume80
Issue number14
DOIs
StatePublished - Apr 8 2002

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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