Abstract
The leakage characteristics and dielectric properties of Pt/(Ba,Sr)TiO 3/Pt thin-film capacitors were found to be remarkably sensitive to the postannealing temperature in oxygen and nitrogen atmosphere. High leakage currents and low-frequency dielectric relaxation were found in as-deposited capacitors after they had been postannealed in nitrogen at 550°C and subsequently annealed in oxygen at 350°C. Such results are related to the mobile oxygen ions and oxygen vacancies accumulated in the (Ba,Sr)TiO 3 films. The chemical process of the formation of charged oxygen ions during postannealing is proposed.
Original language | English (US) |
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Pages (from-to) | 2538-2540 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 80 |
Issue number | 14 |
DOIs | |
State | Published - Apr 8 2002 |
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)