Oxygen vacancy motion in Er-doped barium strontium titanate thin films

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Amphoteric dopants are widely used in BaTi O3 -based dielectrics to improve capacitor reliability. In this work, an analogous approach was explored for barium strontium titanate thin films. Ba0.7 Sr0.3 Ti O3 thin films were prepared by chemical solution deposition. Er was used as a dopant to decrease the leakage current and improve the film lifetime under dc electric field. The (Ba+Sr) Ti ratio in the precursor solution was modified to facilitate doping on the A site, the B site, or both the A and B sites. It was observed that when (Ba+Sr) Ti=1, the dopant has little effect on the dielectric constant, but decreases both the loss tangent and the leakage current. A current transient (peak) was observed prior to resistance degradation in both the undoped and Er-doped samples and was related to oxygen migration under dc bias. It is shown that Er doping effectively decreases the oxygen vacancy mobility, which may lead to longer lifetime under dc field in thin film Ba0.7 Sr0.3 Ti O3 capacitors.

Original languageEnglish (US)
Article number172906
JournalApplied Physics Letters
Volume89
Issue number17
DOIs
StatePublished - Nov 6 2006

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strontium
barium
capacitors
oxygen
leakage
thin films
life (durability)
tangents
permittivity
degradation
electric fields

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "Amphoteric dopants are widely used in BaTi O3 -based dielectrics to improve capacitor reliability. In this work, an analogous approach was explored for barium strontium titanate thin films. Ba0.7 Sr0.3 Ti O3 thin films were prepared by chemical solution deposition. Er was used as a dopant to decrease the leakage current and improve the film lifetime under dc electric field. The (Ba+Sr) Ti ratio in the precursor solution was modified to facilitate doping on the A site, the B site, or both the A and B sites. It was observed that when (Ba+Sr) Ti=1, the dopant has little effect on the dielectric constant, but decreases both the loss tangent and the leakage current. A current transient (peak) was observed prior to resistance degradation in both the undoped and Er-doped samples and was related to oxygen migration under dc bias. It is shown that Er doping effectively decreases the oxygen vacancy mobility, which may lead to longer lifetime under dc field in thin film Ba0.7 Sr0.3 Ti O3 capacitors.",
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Oxygen vacancy motion in Er-doped barium strontium titanate thin films. / Wang, Junling; Trolier-McKinstry, Susan E.

In: Applied Physics Letters, Vol. 89, No. 17, 172906, 06.11.2006.

Research output: Contribution to journalArticle

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AB - Amphoteric dopants are widely used in BaTi O3 -based dielectrics to improve capacitor reliability. In this work, an analogous approach was explored for barium strontium titanate thin films. Ba0.7 Sr0.3 Ti O3 thin films were prepared by chemical solution deposition. Er was used as a dopant to decrease the leakage current and improve the film lifetime under dc electric field. The (Ba+Sr) Ti ratio in the precursor solution was modified to facilitate doping on the A site, the B site, or both the A and B sites. It was observed that when (Ba+Sr) Ti=1, the dopant has little effect on the dielectric constant, but decreases both the loss tangent and the leakage current. A current transient (peak) was observed prior to resistance degradation in both the undoped and Er-doped samples and was related to oxygen migration under dc bias. It is shown that Er doping effectively decreases the oxygen vacancy mobility, which may lead to longer lifetime under dc field in thin film Ba0.7 Sr0.3 Ti O3 capacitors.

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