p-GaN surface treatments for metal contacts

Jingxi Sun, K. A. Rickert, J. M. Redwing, A. B. Ellis, F. J. Himpsel, T. F. Kuech

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Abstract

The chemical bonding and electronic properties of wet, chemically treated p-GaN surfaces were studied using synchrotron radiation photoemission spectroscopy. Chlorine-based chemical bonding was identified on the conventional HCl-treated p-GaN surface, which is associated with a shift of the surface Fermi level toward the conduction band edge by ∼0.9 eV with respect to the thermally cleaned surface. Compared to the HCl-treated surface, the surface Fermi level on the KOH-treated surface lies about ∼1.0 eV closer to the valence band edge, resulting in a much smaller surface barrier height to p-type materials than the HCl-treated surface. The smaller surface barrier height to p-GaN after KOH treatment can lead to a lower contact resistivity and can play an important role in lowering the metal contact resistivity to p-GaN.

Original languageEnglish (US)
Pages (from-to)415-417
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number4
DOIs
StatePublished - Jan 24 2000

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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    Sun, J., Rickert, K. A., Redwing, J. M., Ellis, A. B., Himpsel, F. J., & Kuech, T. F. (2000). p-GaN surface treatments for metal contacts. Applied Physics Letters, 76(4), 415-417. https://doi.org/10.1063/1.125772