P -type Bi2 Se3 for topological insulator and low-temperature thermoelectric applications

Y. S. Hor, Anthony Raymond Richardella, P. Roushan, Y. Xia, J. G. Checkelsky, A. Yazdani, M. Z. Hasan, N. P. Ong, R. J. Cava

Research output: Contribution to journalArticle

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Abstract

The growth and elementary properties of p -type Bi2 Se3 single crystals are reported. Based on a hypothesis about the defect chemistry of Bi2 Se3, the p -type behavior has been induced through low-level substitutions (1% or less) of Ca for Bi. Scanning tunneling microscopy is employed to image the defects and establish their charge. Tunneling and angle-resolved photoemission spectra show that the Fermi level has been lowered into the valence band by about 400 meV in Bi1.98 Ca0.02 Se3 relative to the n -type material. p -type single crystals with ab -plane Seebeck coefficients of +180 μV/K at room temperature are reported. These crystals show an anomalous peak in the Seebeck coefficient at low temperatures, reaching +120 μV K-1 at 7 K, giving them a high thermoelectric power factor at low temperatures. In addition to its interesting thermoelectric properties, p -type Bi2 Se3 is of substantial interest for studies of technologies and phenomena proposed for topological insulators.

Original languageEnglish (US)
Article number195208
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume79
Issue number19
DOIs
StatePublished - May 1 2009

Fingerprint

Seebeck effect
Seebeck coefficient
insulators
single crystals
defects
Single crystals
scanning tunneling microscopy
Defects
photoelectric emission
Thermoelectric power
Photoemission
Scanning tunneling microscopy
substitutes
chemistry
Valence bands
Fermi level
valence
Temperature
room temperature
Substitution reactions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Hor, Y. S. ; Richardella, Anthony Raymond ; Roushan, P. ; Xia, Y. ; Checkelsky, J. G. ; Yazdani, A. ; Hasan, M. Z. ; Ong, N. P. ; Cava, R. J. / P -type Bi2 Se3 for topological insulator and low-temperature thermoelectric applications. In: Physical Review B - Condensed Matter and Materials Physics. 2009 ; Vol. 79, No. 19.
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P -type Bi2 Se3 for topological insulator and low-temperature thermoelectric applications. / Hor, Y. S.; Richardella, Anthony Raymond; Roushan, P.; Xia, Y.; Checkelsky, J. G.; Yazdani, A.; Hasan, M. Z.; Ong, N. P.; Cava, R. J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 79, No. 19, 195208, 01.05.2009.

Research output: Contribution to journalArticle

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AU - Hor, Y. S.

AU - Richardella, Anthony Raymond

AU - Roushan, P.

AU - Xia, Y.

AU - Checkelsky, J. G.

AU - Yazdani, A.

AU - Hasan, M. Z.

AU - Ong, N. P.

AU - Cava, R. J.

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