Panel-allocated defect SRRs effect in X-band LHMs

Lei Kang, Chunrong Luo, Qian Zhao, Juan Song, Quanhong Fu, Xiaopeng Zhao

    Research output: Contribution to journalArticle

    9 Scopus citations

    Abstract

    We experimentally investigated the defect effects of LHMs when panel-allocated defects SRRs are introduced. By measuring the X-band transmission through metamaterial with different sizes and orientations panel-allocated defect SRRs, it was found that characters of resonant peak, including resonance frequency, magnitude and band pass, markedly change. And the panel-allocated defects in LHMs have more effect on electromagnetic behavior than that of dot and linear ones. It is thought that the existences of panel-allocated defects break the symmetry of perfect LHMs and result in a new electromagnetic resonance.

    Original languageEnglish (US)
    Pages (from-to)2440-2442
    Number of pages3
    JournalChinese Science Bulletin
    Volume49
    Issue number23
    DOIs
    StatePublished - Dec 1 2004

    All Science Journal Classification (ASJC) codes

    • General

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    Kang, L., Luo, C., Zhao, Q., Song, J., Fu, Q., & Zhao, X. (2004). Panel-allocated defect SRRs effect in X-band LHMs. Chinese Science Bulletin, 49(23), 2440-2442. https://doi.org/10.1360/04ww0089