Paramagnetic defects and photoluminescence in carbon rich a-SiC:H films: Role of hydrogen and excess of carbon

A. V. Vasin, A. A. Konchits, S. P. Kolesnik, A. V. Rusavsky, V. S. Lysenko, A. N. Nazarov, Y. Ishikawa, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied the effect of excess of carbon in a-Si1-xC x:H on local structure reconstruction, evolution of paramagnetic defects and photoluminescence (PL) after vacuum annealing over the temperature range 300-850°C Two series of samples with stoichiometric (Si 0.5C0.5) and carbon-rich (Si0.3C0.7) compositions were studied by Electron Paramagnetic Resonance (EPR), Photoluminescence (PL) and Raman scattering. It is found that there exist two effects responsible for the PL efficiency of a-Si1-xCx:H films: "killing" effect of carbon-related paramagnetic defects and "enhancing" effect of carbon-hydrogen bonds in Si:C-Hn configuration. A microstructure model is proposed for explaining the non-monotonic behavior of integrated PL intensity and concentration of paramagnetic centers and Si:C-Hn bonds as a function of annealing temperature. This model evolves from the following principal processes during thermal treatment of a-S1-xCx:H: thermally activated release of weakly bonded hydrogen, migration of hydrogen within material and interaction of hydrogen with carbon-related defects.

Original languageEnglish (US)
Title of host publicationSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
PublisherMaterials Research Society
Pages321-326
Number of pages6
ISBN (Print)9781558999541
DOIs
StatePublished - Jan 1 2007
EventSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II - San Francisco, CA, United States
Duration: Apr 9 2007Apr 13 2007

Publication series

NameMaterials Research Society Symposium Proceedings
Volume994
ISSN (Print)0272-9172

Other

OtherSemiconductor Defect Engineering - Materials, Synthetic Structures and Devices II
CountryUnited States
CitySan Francisco, CA
Period4/9/074/13/07

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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