Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures

Patrick M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journalArticle

81 Citations (Scopus)

Abstract

We find that two paramagnetic]] trivalent silicon" centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures.

Original languageEnglish (US)
Pages (from-to)96-98
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number1
DOIs
StatePublished - Dec 1 1984

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metal oxides
silicon
radiation damage

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures. / Lenahan, Patrick M.; Dressendorfer, P. V.

In: Applied Physics Letters, Vol. 44, No. 1, 01.12.1984, p. 96-98.

Research output: Contribution to journalArticle

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