Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structures

P. M. Lenahan, P. V. Dressendorfer

Research output: Contribution to journalArticlepeer-review

84 Scopus citations

Abstract

We find that two paramagnetic]] trivalent silicon" centers appear to be primarily responsible for radiation damage in metal-oxide-silicon structures.

Original languageEnglish (US)
Pages (from-to)96-98
Number of pages3
JournalApplied Physics Letters
Volume44
Issue number1
DOIs
StatePublished - 1984

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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