Passivation layer breakdown during laser-fired contact formation for photovoltaic devices

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.

Original languageEnglish (US)
Article number024105
JournalApplied Physics Letters
Volume105
Issue number2
DOIs
StatePublished - Jan 1 2014

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passivity
breakdown
lasers
pulse duration
low resistance
electric contacts
flux density
solar cells
wafers
pulses

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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title = "Passivation layer breakdown during laser-fired contact formation for photovoltaic devices",
abstract = "Low resistance laser-fired ohmic contacts (LFCs) can be formed on the backside of Si-based solar cells using microsecond pulses. However, the impact of these longer pulse durations on the dielectric passivation layer is not clear. Retention of the passivation layer during processing is critical to ensure low recombination rates of electron-hole pairs at the rear surface of the device. In this work, advanced characterization tools are used to demonstrate that although the SiO2 passivation layer melts directly below the laser, it is well preserved outside the immediate LFC region over a wide range of processing parameters. As a result, low recombination rates at the passivation layer/wafer interface can be expected despite higher energy densities associated with these pulse durations.",
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Passivation layer breakdown during laser-fired contact formation for photovoltaic devices. / Raghavan, A.; Palmer, Todd; Debroy, Tarasankar.

In: Applied Physics Letters, Vol. 105, No. 2, 024105, 01.01.2014.

Research output: Contribution to journalArticle

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