Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants

J. S. Wang; S. J. Fonash; S. Ashok

doi:10.1109/EDL.1983.25792

Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants

J. S. Wang, S. J. Fonash, S. Ashok

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Abstract

Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.

Original language	English (US)
Pages (from-to)	432-435
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	4
Issue number	12
DOIs	https://doi.org/10.1109/EDL.1983.25792
State	Published - Dec 1 1983

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1983.25792

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title = "Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants",

abstract = "Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.",

author = "Wang, {J. S.} and Fonash, {S. J.} and S. Ashok",

year = "1983",

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AU - Fonash, S. J.

AU - Ashok, S.

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Y1 - 1983/12/1

N2 - Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.

AB - Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.

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DO - 10.1109/EDL.1983.25792

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JF - IEEE Electron Device Letters

SN - 0741-3106

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ER -

Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants

Abstract

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