Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants

J. S. Wang, S. J. Fonash, S Ashok

Research output: Contribution to journalArticlepeer-review

28 Scopus citations

Abstract

Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.

Original languageEnglish (US)
Pages (from-to)432-435
Number of pages4
JournalIEEE Electron Device Letters
Volume4
Issue number12
DOIs
StatePublished - Dec 1 1983

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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