Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants

J. S. Wang; S. J. Fonash; S Ashok

doi:10.1109/EDL.1983.25792

Passivation of Dry-Etching Damage Using Low-Energy Hydrogen Implants

J. S. Wang, S. J. Fonash, S Ashok

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.

Original language	English (US)
Pages (from-to)	432-435
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	4
Issue number	12
DOIs	https://doi.org/10.1109/EDL.1983.25792
State	Published - Dec 1 1983

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/EDL.1983.25792

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abstract = "Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.",

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