Abstract
Reactive-ion etching and ion-beam etching have been shown to cause a damaged layer at silicon surfaces. In this study it is demonstrated that the damage in this layer can be passivated using a room-temperature low-energy hydrogen ion implantation from a Kaufman ion source. For the etching conditions used and for the range of beam parameters explored, 5-min implants with a 0.4-keV hydrogen beam were most effective in passivating dry-etching damage.
Original language | English (US) |
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Pages (from-to) | 432-435 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 4 |
Issue number | 12 |
DOIs | |
State | Published - Dec 1 1983 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering