Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen

K. Srikanth, J. Shenal, S. Ashok

Research output: Contribution to journalArticle

Abstract

High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.

Original languageEnglish (US)
Pages (from-to)401-406
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, B
Volume88
Issue number4
DOIs
StatePublished - Jun 2 1994

Fingerprint

Silicon
hydrogen ions
nuclear energy
Passivation
Ion implantation
Nuclear energy
passivity
ion implantation
Protons
Hydrogen
damage
implantation
Defects
defects
silicon
hydrogen
Deep level transient spectroscopy
energy
Impurities
impurities

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

@article{8e4a0329e65f435eb5710c7f0f1b0faf,
title = "Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen",
abstract = "High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.",
author = "K. Srikanth and J. Shenal and S. Ashok",
year = "1994",
month = "6",
day = "2",
doi = "10.1016/0168-583X(94)95390-2",
language = "English (US)",
volume = "88",
pages = "401--406",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "4",

}

Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen. / Srikanth, K.; Shenal, J.; Ashok, S.

In: Nuclear Inst. and Methods in Physics Research, B, Vol. 88, No. 4, 02.06.1994, p. 401-406.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen

AU - Srikanth, K.

AU - Shenal, J.

AU - Ashok, S.

PY - 1994/6/2

Y1 - 1994/6/2

N2 - High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.

AB - High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.

UR - http://www.scopus.com/inward/record.url?scp=43949150571&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=43949150571&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(94)95390-2

DO - 10.1016/0168-583X(94)95390-2

M3 - Article

AN - SCOPUS:43949150571

VL - 88

SP - 401

EP - 406

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 4

ER -