Passivation of high energy hydrogen ion implantation damage in silicon with low energy atomic hydrogen

K. Srikanth, J. Shenal, S. Ashok

Research output: Contribution to journalArticlepeer-review

Abstract

High-energy hydrogen ion (proton) implantation is used in Si for intentionally creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy ( < 0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence of self-passivation of defects produced by H implantation.

Original languageEnglish (US)
Pages (from-to)401-406
Number of pages6
JournalNuclear Inst. and Methods in Physics Research, B
Volume88
Issue number4
DOIs
StatePublished - Jun 2 1994

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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