The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 Å. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)