Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

S. Kar, K. Srikanth, S. Ashok

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 Å. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.

Original languageEnglish (US)
Pages (from-to)3001-3003
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number24
DOIs
StatePublished - Dec 1 1992

Fingerprint

passivity
hydrogenation
metal oxides
ion beams
damage
defects
silicon
room temperature
frequency measurement
electrical impedance
traps
oxides
electric potential
hydrogen
ions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kar, S. ; Srikanth, K. ; Ashok, S. / Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation. In: Applied Physics Letters. 1992 ; Vol. 60, No. 24. pp. 3001-3003.
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Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation. / Kar, S.; Srikanth, K.; Ashok, S.

In: Applied Physics Letters, Vol. 60, No. 24, 01.12.1992, p. 3001-3003.

Research output: Contribution to journalArticle

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