Passivation of ion-beam damage in metal-oxide-silicon structures by room-temperature hydrogenation

S. Kar, K. Srikanth, S. Ashok

Research output: Contribution to journalArticle

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Abstract

The efficacy of room-temperature hydrogenation, by a 400-eV hydrogen beam from a Kaufman source, in the removal of ion-beam-induced defects in metal-oxide-silicon (MOS) structures was investigated. The defects were generated by exposure of thermally oxidized silicon samples to a 16-kV Si ion beam in an ion implanter. The oxide thickness was 115 or 350 Å. Experimental results obtained from admittance-voltage-frequency measurements of the MOS structures indicated significant reductions in trap density and other defects.

Original languageEnglish (US)
Pages (from-to)3001-3003
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number24
DOIs
StatePublished - Dec 1 1992

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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