Passivation of radiation damage in MOS structures by hydrogen ion implantation

S. Kar, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.

Original languageEnglish (US)
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages404-405
Number of pages2
StatePublished - 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Kar, S., & Ashok, S. (1992). Passivation of radiation damage in MOS structures by hydrogen ion implantation. In Conference on Solid State Devices and Materials (pp. 404-405). Publ by Business Cent for Acad Soc Japan.