Passivation of radiation damage in MOS structures by hydrogen ion implantation

S. Kar, S. Ashok

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.

Original languageEnglish (US)
Title of host publicationConference on Solid State Devices and Materials
PublisherPubl by Business Cent for Acad Soc Japan
Pages404-405
Number of pages2
StatePublished - 1992
EventExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
Duration: Aug 26 1992Aug 28 1992

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period8/26/928/28/92

Fingerprint

Radiation damage
Silicon oxides
Passivation
Ion implantation
Hydrogenation
Hydrogen
Ion beams
Metals
Defects
Electric potential
Silicon wafers
Capacitance
Radiation
Silicon
Oxides
Ions
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Kar, S., & Ashok, S. (1992). Passivation of radiation damage in MOS structures by hydrogen ion implantation. In Conference on Solid State Devices and Materials (pp. 404-405). Publ by Business Cent for Acad Soc Japan.
Kar, S. ; Ashok, S. / Passivation of radiation damage in MOS structures by hydrogen ion implantation. Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. pp. 404-405
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Kar, S & Ashok, S 1992, Passivation of radiation damage in MOS structures by hydrogen ion implantation. in Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, pp. 404-405, Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92, Tsukuba, Jpn, 8/26/92.

Passivation of radiation damage in MOS structures by hydrogen ion implantation. / Kar, S.; Ashok, S.

Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan, 1992. p. 404-405.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.

AB - To generate the radiation-induced defects in the metal-oxide-silicon (MOS) structures, oxidized silicon wafers were exposed to a beam of 16 keV silicon ions. The oxide thickness was either 115 or 350 A. To passivate the ion-beam-induced defects, half the samples underwent ion beam hydrogenation, using a Kaufman gun, at room temperature. Before hydrogenation, the capacitance-voltage characteristics were absolutely flat. Upon hydrogenation, the admittance-voltage characteristics reverted to the standard MOS form.

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Kar S, Ashok S. Passivation of radiation damage in MOS structures by hydrogen ion implantation. In Conference on Solid State Devices and Materials. Publ by Business Cent for Acad Soc Japan. 1992. p. 404-405