Passivation of ZnO TFTs

Devin A. Mourey, Mitchell S. Burberry, Dalong A. Zhao, Yuanyuan V. Li, Shelby F. Nelson, Lee Tutt, Thomas D. Pawlik, David H. Levy, Thomas Nelson Jackson

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The impact of passivation processes on ZnO thin-film transistors is reported. In general, passivation processes result in back-channel doping, which corresponds to shifts in threshold voltage and changes in subthreshold slope. It was determined that ALD-based passivation results in considerably smaller undesirable shifts than those observed with plasma-based processes. Two approaches, one a bulk doping with ammonia and the other a surface treatment with hydrogen peroxide, to further mitigate the detrimental effects of the passivation process are described. After proper passivation, ZnO devices show negligible hysteresis, have excellent stability to bias stress, and maintain or improve the good transport properties of as-deposited devices. Although the existence of grain boundaries has been assumed to be a point of concern for device stability in polycrystalline metal oxides, no evidence was found to suggest that the grain boundaries present in these ZnO thin-film transistors have affected the device stability.

Original languageEnglish (US)
Pages (from-to)753-761
Number of pages9
JournalJournal of the Society for Information Display
Volume18
Issue number10
DOIs
StatePublished - Oct 1 2010

Fingerprint

Passivation
passivity
Thin film transistors
Grain boundaries
transistors
grain boundaries
Doping (additives)
shift
thin films
surface treatment
hydrogen peroxide
Threshold voltage
Ammonia
Hydrogen peroxide
threshold voltage
Transport properties
Oxides
Hydrogen Peroxide
metal oxides
Hysteresis

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Mourey, D. A., Burberry, M. S., Zhao, D. A., Li, Y. V., Nelson, S. F., Tutt, L., ... Jackson, T. N. (2010). Passivation of ZnO TFTs. Journal of the Society for Information Display, 18(10), 753-761. https://doi.org/10.1889/JSID18.10.753
Mourey, Devin A. ; Burberry, Mitchell S. ; Zhao, Dalong A. ; Li, Yuanyuan V. ; Nelson, Shelby F. ; Tutt, Lee ; Pawlik, Thomas D. ; Levy, David H. ; Jackson, Thomas Nelson. / Passivation of ZnO TFTs. In: Journal of the Society for Information Display. 2010 ; Vol. 18, No. 10. pp. 753-761.
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Mourey, DA, Burberry, MS, Zhao, DA, Li, YV, Nelson, SF, Tutt, L, Pawlik, TD, Levy, DH & Jackson, TN 2010, 'Passivation of ZnO TFTs', Journal of the Society for Information Display, vol. 18, no. 10, pp. 753-761. https://doi.org/10.1889/JSID18.10.753

Passivation of ZnO TFTs. / Mourey, Devin A.; Burberry, Mitchell S.; Zhao, Dalong A.; Li, Yuanyuan V.; Nelson, Shelby F.; Tutt, Lee; Pawlik, Thomas D.; Levy, David H.; Jackson, Thomas Nelson.

In: Journal of the Society for Information Display, Vol. 18, No. 10, 01.10.2010, p. 753-761.

Research output: Contribution to journalArticle

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Mourey DA, Burberry MS, Zhao DA, Li YV, Nelson SF, Tutt L et al. Passivation of ZnO TFTs. Journal of the Society for Information Display. 2010 Oct 1;18(10):753-761. https://doi.org/10.1889/JSID18.10.753