A process for depositing 50°C silicon nitride films has been developed in a high-density (electron cyclotron resonance) plasma system. While conventional 250°C deposited nitrides have Si-H/N-H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si-H/N-H bond ratios ≥1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below 3 × 10-9 A/cm2 for electric fields below 2 MV/cm. Breakdown voltage, defined by 1 × 10-6 A/cm2, is greater than 6 MV/cm.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Materials Chemistry