Pathway to depositing device-quality 50°C silicon nitride in a high-density plasma system

David G. Farber, Sanghoon Bae, Murat Okandan, Douglas M. Reber, Terence Kuzma, Stephen J. Fonash

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

A process for depositing 50°C silicon nitride films has been developed in a high-density (electron cyclotron resonance) plasma system. While conventional 250°C deposited nitrides have Si-H/N-H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si-H/N-H bond ratios ≥1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below 3 × 10-9 A/cm2 for electric fields below 2 MV/cm. Breakdown voltage, defined by 1 × 10-6 A/cm2, is greater than 6 MV/cm.

Original languageEnglish (US)
Pages (from-to)2254-2257
Number of pages4
JournalJournal of the Electrochemical Society
Volume146
Issue number6
DOIs
StatePublished - Jun 1999

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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