Abstract
2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Furthermore, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6371-6379 |
| Number of pages | 9 |
| Journal | Advanced Functional Materials |
| Volume | 26 |
| Issue number | 35 |
| DOIs | |
| State | Published - Sep 20 2016 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Biomaterials
- Condensed Matter Physics
- Electrochemistry
Cite this
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Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor. / Zheng, Wei; Lin, Junhao; Feng, Wei; Xiao, Kai; Qiu, Yunfeng; Chen, Xiao Shuang; Liu, Guangbo; Cao, Wenwu; Pantelides, Sokrates T.; Zhou, Wu; Hu, Ping An.
In: Advanced Functional Materials, Vol. 26, No. 35, 20.09.2016, p. 6371-6379.Research output: Contribution to journal › Article
TY - JOUR
T1 - Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor
AU - Zheng, Wei
AU - Lin, Junhao
AU - Feng, Wei
AU - Xiao, Kai
AU - Qiu, Yunfeng
AU - Chen, Xiao Shuang
AU - Liu, Guangbo
AU - Cao, Wenwu
AU - Pantelides, Sokrates T.
AU - Zhou, Wu
AU - Hu, Ping An
PY - 2016/9/20
Y1 - 2016/9/20
N2 - 2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Furthermore, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.
AB - 2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Furthermore, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.
UR - http://www.scopus.com/inward/record.url?scp=84978772072&partnerID=8YFLogxK
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U2 - 10.1002/adfm.201602494
DO - 10.1002/adfm.201602494
M3 - Article
AN - SCOPUS:84978772072
VL - 26
SP - 6371
EP - 6379
JO - Advanced Functional Materials
JF - Advanced Functional Materials
SN - 1616-301X
IS - 35
ER -