Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor

Wei Zheng, Junhao Lin, Wei Feng, Kai Xiao, Yunfeng Qiu, Xiao Shuang Chen, Guangbo Liu, Wenwu Cao, Sokrates T. Pantelides, Wu Zhou, Ping An Hu

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

2D layered MoS2 has drawn intense attention for its applications in flexible electronic, optoelectronic, and spintronic devices. Most of the MoS2 atomic layers grown by conventional chemical vapor deposition techniques are n-type due to the abundant sulfur vacancies. Facile production of MoS2 atomic layers with p-type behavior, however, remains challenging. Here, a novel one-step growth has been developed to attain p-type MoS2 layers in large scale by using Mo-containing sol–gel, including 1% tungsten (W). Atomic-resolution electron microscopy characterization reveals that small tungsten oxide clusters are commonly present on the as-grown MoS2 film due to the incomplete reduction of W precursor at the reaction temperature. These omnipresent small tungsten oxide clusters contribute to the p-type behavior, as verified by density functional theory calculations, while preserving the crystallinity of the MoS2 atomic layers. The Mo containing sol–gel precursor is compatible with the soft-lithography techniques, which enables patterned growth of p-type MoS2 atomic layers into regular arrays with different shapes, holding great promise for highly integrated device applications. Furthermore, an atomically thin p–n junction is fabricated by the as-prepared MoS2, which shows strong rectifying behavior.

Original languageEnglish (US)
Pages (from-to)6371-6379
Number of pages9
JournalAdvanced Functional Materials
Volume26
Issue number35
DOIs
StatePublished - Sep 20 2016

Fingerprint

Tungsten
Flexible electronics
Magnetoelectronics
Sulfur
tungsten oxides
Optoelectronic devices
Lithography
Electron microscopy
Vacancies
Density functional theory
Chemical vapor deposition
Oxides
optoelectronic devices
preserving
crystallinity
electron microscopy
tungsten
sulfur
lithography
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Condensed Matter Physics
  • Electrochemistry

Cite this

Zheng, W., Lin, J., Feng, W., Xiao, K., Qiu, Y., Chen, X. S., ... Hu, P. A. (2016). Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor. Advanced Functional Materials, 26(35), 6371-6379. https://doi.org/10.1002/adfm.201602494
Zheng, Wei ; Lin, Junhao ; Feng, Wei ; Xiao, Kai ; Qiu, Yunfeng ; Chen, Xiao Shuang ; Liu, Guangbo ; Cao, Wenwu ; Pantelides, Sokrates T. ; Zhou, Wu ; Hu, Ping An. / Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor. In: Advanced Functional Materials. 2016 ; Vol. 26, No. 35. pp. 6371-6379.
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Zheng, W, Lin, J, Feng, W, Xiao, K, Qiu, Y, Chen, XS, Liu, G, Cao, W, Pantelides, ST, Zhou, W & Hu, PA 2016, 'Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor', Advanced Functional Materials, vol. 26, no. 35, pp. 6371-6379. https://doi.org/10.1002/adfm.201602494

Patterned Growth of P-Type MoS2 Atomic Layers Using Sol–Gel as Precursor. / Zheng, Wei; Lin, Junhao; Feng, Wei; Xiao, Kai; Qiu, Yunfeng; Chen, Xiao Shuang; Liu, Guangbo; Cao, Wenwu; Pantelides, Sokrates T.; Zhou, Wu; Hu, Ping An.

In: Advanced Functional Materials, Vol. 26, No. 35, 20.09.2016, p. 6371-6379.

Research output: Contribution to journalArticle

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AU - Zheng, Wei

AU - Lin, Junhao

AU - Feng, Wei

AU - Xiao, Kai

AU - Qiu, Yunfeng

AU - Chen, Xiao Shuang

AU - Liu, Guangbo

AU - Cao, Wenwu

AU - Pantelides, Sokrates T.

AU - Zhou, Wu

AU - Hu, Ping An

PY - 2016/9/20

Y1 - 2016/9/20

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