A Pd/Pt/Au ohmic contact to AlSb/InAs0.7Sb0.3 heterostructures has been studied. The contacts provide a contact resistance of 0.07 (±0.01) Ω mm when annealed at 300 °C for 15 min. Prior to annealing, the contact reacts non-uniformly with the heterostructure, but not down to the InAs0.7Sb0.3 channel. Following annealing at 300 °C for 15 min, the entire heterostructure beneath the contact is consumed down to the underlying AlSb buffer layer. This morphology differs from that reported for optimized ohmic contacts to AlGaAs/GaAs heterostructures.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry