Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors

R. Dormaier, Q. Zhang, Y. C. Chou, M. D. Lange, J. M. Yang, A. Oki, Suzanne E. Mohney

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The authors describe a Pd/Ru/Au Ohmic contact with enhanced thermal stability over the more commonly used Pd/Pt/Au Ohmic contact for InAlSb/InAs high electron mobility transistors. Transmission electron microscopy shows that reaction between Pd and the semiconductor begins in samples even before they are annealed. Decreases in contact resistance are correlated with increasing reaction between Pd and the semiconductor for annealing and aging at 175-225 °C for 3 h or 1 week. Small voids form in severely aged samples but do not increase the contact resistance. The Ru diffusion barrier is never observed to react with any other materials in either the contact or the semiconductor, and Au remains isolated from the Pd-bearing reaction products and semiconductor.

Original languageEnglish (US)
Pages (from-to)2145-2152
Number of pages8
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number5
DOIs
StatePublished - Oct 12 2009

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Ohmic contacts
High electron mobility transistors
high electron mobility transistors
Heterojunctions
electric contacts
Semiconductor materials
Contact resistance
contact resistance
Bearings (structural)
Diffusion barriers
Reaction products
reaction products
voids
Thermodynamic stability
thermal stability
Aging of materials
Annealing
Transmission electron microscopy
transmission electron microscopy
annealing

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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abstract = "The authors describe a Pd/Ru/Au Ohmic contact with enhanced thermal stability over the more commonly used Pd/Pt/Au Ohmic contact for InAlSb/InAs high electron mobility transistors. Transmission electron microscopy shows that reaction between Pd and the semiconductor begins in samples even before they are annealed. Decreases in contact resistance are correlated with increasing reaction between Pd and the semiconductor for annealing and aging at 175-225 °C for 3 h or 1 week. Small voids form in severely aged samples but do not increase the contact resistance. The Ru diffusion barrier is never observed to react with any other materials in either the contact or the semiconductor, and Au remains isolated from the Pd-bearing reaction products and semiconductor.",
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Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors. / Dormaier, R.; Zhang, Q.; Chou, Y. C.; Lange, M. D.; Yang, J. M.; Oki, A.; Mohney, Suzanne E.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 27, No. 5, 12.10.2009, p. 2145-2152.

Research output: Contribution to journalArticle

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AU - Dormaier, R.

AU - Zhang, Q.

AU - Chou, Y. C.

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AU - Yang, J. M.

AU - Oki, A.

AU - Mohney, Suzanne E.

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AB - The authors describe a Pd/Ru/Au Ohmic contact with enhanced thermal stability over the more commonly used Pd/Pt/Au Ohmic contact for InAlSb/InAs high electron mobility transistors. Transmission electron microscopy shows that reaction between Pd and the semiconductor begins in samples even before they are annealed. Decreases in contact resistance are correlated with increasing reaction between Pd and the semiconductor for annealing and aging at 175-225 °C for 3 h or 1 week. Small voids form in severely aged samples but do not increase the contact resistance. The Ru diffusion barrier is never observed to react with any other materials in either the contact or the semiconductor, and Au remains isolated from the Pd-bearing reaction products and semiconductor.

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