Penetrating the oxide barrier in situ and separating freestanding porous anodic alumina films in one step

Mingliang Tian, Shengyong Xu, Jinguo Wang, Nitesh Kumar, Eric Wertz, Qi Li, Paul M. Campbell, Moses Hung-Wai Chan, Thomas E. Mallouk

Research output: Contribution to journalArticle

129 Scopus citations

Abstract

A simple method for penetrating the barrier layer of an anodic aluminum oxide (AAO) film and for detaching the AAO film from residual AI foil was developed by reversing the bias voltage in situ after the anodization process is completed. With this technique, we have been able to obtain large pieces of free-standing AAO membranes with regular pore sizes of sub-10 nm. By combining Ar ion milling and wetting enhancement processes, Au nanowires were grown in the sub-10 nm pores of the AAO films. Further scaling down of the pore size and extension to the deposition of nanowires and nanotubes of materials other than Au should be possible by further optimizing this procedure.

Original languageEnglish (US)
Pages (from-to)697-703
Number of pages7
JournalNano letters
Volume5
Issue number4
DOIs
StatePublished - Apr 1 2005

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Tian, M., Xu, S., Wang, J., Kumar, N., Wertz, E., Li, Q., Campbell, P. M., Chan, M. H-W., & Mallouk, T. E. (2005). Penetrating the oxide barrier in situ and separating freestanding porous anodic alumina films in one step. Nano letters, 5(4), 697-703. https://doi.org/10.1021/nl0501112