Pentacene-based organic thin-film transistors

Yen Yi Lin, David J. Gundlach, Shelby F. Nelson, Thomas N. Jackson

Research output: Contribution to journalArticle

520 Citations (Scopus)

Abstract

Organic thin-film transistors using the fused-ring polycyclic aromatic hydrocarbon pentacene as the active electronic material have shown mobility as large as 0.7 cm2/V-s and on/off current ratio larger than 108; both values are comparable to hydrogenated amorphous silicon devices. On the other hand, these and most other organic TFT's have an undesirably large subthreshold slope. We show here that the large subthreshold slope typically observed is not an intrinsic property of the organic semiconducting material and that devices with subthreshold slope similar to amorphous silicon devices are possible.

Original languageEnglish (US)
Pages (from-to)1325-1331
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume44
Issue number8
DOIs
StatePublished - Dec 1 1997

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Thin film transistors
Amorphous silicon
Polycyclic Aromatic Hydrocarbons
Polycyclic aromatic hydrocarbons
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Lin, Yen Yi ; Gundlach, David J. ; Nelson, Shelby F. ; Jackson, Thomas N. / Pentacene-based organic thin-film transistors. In: IEEE Transactions on Electron Devices. 1997 ; Vol. 44, No. 8. pp. 1325-1331.
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Pentacene-based organic thin-film transistors. / Lin, Yen Yi; Gundlach, David J.; Nelson, Shelby F.; Jackson, Thomas N.

In: IEEE Transactions on Electron Devices, Vol. 44, No. 8, 01.12.1997, p. 1325-1331.

Research output: Contribution to journalArticle

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