Pentacene organic thinfilm transistors for circuit and display applications

Hagen Klauk, David J. Gundlach, Jonathan A. Nichols, Thomas Nelson Jackson

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

We have fabricated organic thinfilm transistors (TFT's) using the smallmolecule polycyclic aromatic hydrocarbon pentacene as the active material. Devices were fabricated on glass substrates using lowtemperature ionbeam deposited silicon dioxide as the gate dielectric, ionbeam deposited palladium for the source and drain contacts, and vacuumevaporated pentacene to form the active layer. Excellent electrical characteristics were obtained, including carrier mobility as large as 0.6 cm2/Vs, on/off current ratio as large as 108, and subthreshold slope as low as 0.7 V/dec, all record values for organic transistors fabricated on nonsinglecrystal substrates.

Original languageEnglish (US)
Number of pages1
JournalIEEE Transactions on Electron Devices
Volume46
Issue number6
StatePublished - Dec 1 1999

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Transistors
Display devices
Networks (circuits)
Gate dielectrics
Carrier mobility
Polycyclic Aromatic Hydrocarbons
Palladium
Substrates
Polycyclic aromatic hydrocarbons
Silicon Dioxide
Silica
Glass
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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Pentacene organic thinfilm transistors for circuit and display applications. / Klauk, Hagen; Gundlach, David J.; Nichols, Jonathan A.; Jackson, Thomas Nelson.

In: IEEE Transactions on Electron Devices, Vol. 46, No. 6, 01.12.1999.

Research output: Contribution to journalArticle

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