Chemically modified source and drain contacts were used to fabricate organic thin film transistors (OTFT) with improved linear region characteristics. Heavily doped, thermally oxidized single crystal silicon with linear field-effect mobility greater than 0.5 cm 2/V-s was used as substrate for fabrication of OTFT. Analysis suggested that poor charge injection in OTFT active layers resulted in large discrepancy in field-effect mobility of the two regions of the device.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering