Pentacene TFT with improved linear region characteristics using chemically modified source and drain electrodes

David J. Gundlach, Lili Jia, Thomas N. Jackson

Research output: Contribution to journalArticlepeer-review

204 Scopus citations

Abstract

Chemically modified source and drain contacts were used to fabricate organic thin film transistors (OTFT) with improved linear region characteristics. Heavily doped, thermally oxidized single crystal silicon with linear field-effect mobility greater than 0.5 cm 2/V-s was used as substrate for fabrication of OTFT. Analysis suggested that poor charge injection in OTFT active layers resulted in large discrepancy in field-effect mobility of the two regions of the device.

Original languageEnglish (US)
Pages (from-to)571-573
Number of pages3
JournalIEEE Electron Device Letters
Volume22
Issue number12
DOIs
StatePublished - Dec 1 2001

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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