Performance Impact of Magnetic and Thermal Attack on STTRAM and Low-Overhead Mitigation Techniques

Jae Won Jang, Swaroop Ghosh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

In this paper, we analyze the fundamental vulnerabilities of Spin-Torque-Transfer RAM on magnetic field and temperature that can be exploited by adversaries with an intent to trigger soft performance failures. We present novel attack vectors and their impact on memory performance (i.e., read, write and retention). We propose a novel low-overhead clock frequency-adaptation technique to mitigate the attack. Our analysis indicate slowing the clock frequency by 85% restores 170 mV of sense margin under 300 Oe DC magnetic field. In addition, 66% operating clock slowdown allows STTRAM to tolerate over 300 Oe AC magnetic field.

Original languageEnglish (US)
Title of host publicationISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages136-141
Number of pages6
ISBN (Electronic)9781450341851
DOIs
StatePublished - Aug 8 2016
Event21st IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2016 - San Francisco, United States
Duration: Aug 8 2016Aug 10 2016

Other

Other21st IEEE/ACM International Symposium on Low Power Electronics and Design, ISLPED 2016
CountryUnited States
CitySan Francisco
Period8/8/168/10/16

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'Performance Impact of Magnetic and Thermal Attack on STTRAM and Low-Overhead Mitigation Techniques'. Together they form a unique fingerprint.

  • Cite this

    Jang, J. W., & Ghosh, S. (2016). Performance Impact of Magnetic and Thermal Attack on STTRAM and Low-Overhead Mitigation Techniques. In ISLPED 2016 - Proceedings of the 2016 International Symposium on Low Power Electronics and Design (pp. 136-141). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1145/2934583.2934614