Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, Blair Richard Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

Original languageEnglish (US)
Title of host publicationESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference
Pages48-55
Number of pages8
DOIs
StatePublished - Dec 1 2009
Event39th European Solid-State Device Research Conference, ESSDERC 2009 - Athens, Greece
Duration: Sep 14 2009Sep 18 2009

Publication series

NameESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

Other

Other39th European Solid-State Device Research Conference, ESSDERC 2009
CountryGreece
CityAthens
Period9/14/099/18/09

Fingerprint

microelectronics
Radiation effects
Microelectronics
physics
Physics
Aging of materials
engineering
performance
energy
simulation
event
Electron mobility
trend
Electron energy levels
Dosimetry
Energy gap
Doping (additives)
Hydrogen
Defects
Ions

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety Research

Cite this

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisavvas, G., Batyrev, I. G., ... Schrimpf, R. D. (2009). Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference (pp. 48-55). [5331355] (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331355
Pantelides, Sokrates T. ; Tsetseris, L. ; Beck, M. J. ; Rashkeev, S. N. ; Hadjisavvas, G. ; Batyrev, I. G. ; Tuttle, Blair Richard ; Marinopoulos, A. G. ; Zhou, X. J. ; Fleetwood, D. M. ; Schrimpf, R. D. / Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. pp. 48-55 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).
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abstract = "The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.",
author = "Pantelides, {Sokrates T.} and L. Tsetseris and Beck, {M. J.} and Rashkeev, {S. N.} and G. Hadjisavvas and Batyrev, {I. G.} and Tuttle, {Blair Richard} and Marinopoulos, {A. G.} and Zhou, {X. J.} and Fleetwood, {D. M.} and Schrimpf, {R. D.}",
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Pantelides, ST, Tsetseris, L, Beck, MJ, Rashkeev, SN, Hadjisavvas, G, Batyrev, IG, Tuttle, BR, Marinopoulos, AG, Zhou, XJ, Fleetwood, DM & Schrimpf, RD 2009, Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. in ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference., 5331355, ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference, pp. 48-55, 39th European Solid-State Device Research Conference, ESSDERC 2009, Athens, Greece, 9/14/09. https://doi.org/10.1109/ESSDERC.2009.5331355

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. / Pantelides, Sokrates T.; Tsetseris, L.; Beck, M. J.; Rashkeev, S. N.; Hadjisavvas, G.; Batyrev, I. G.; Tuttle, Blair Richard; Marinopoulos, A. G.; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.

ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 48-55 5331355 (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AU - Tsetseris, L.

AU - Beck, M. J.

AU - Rashkeev, S. N.

AU - Hadjisavvas, G.

AU - Batyrev, I. G.

AU - Tuttle, Blair Richard

AU - Marinopoulos, A. G.

AU - Zhou, X. J.

AU - Fleetwood, D. M.

AU - Schrimpf, R. D.

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N2 - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

AB - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

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M3 - Conference contribution

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BT - ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference

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Pantelides ST, Tsetseris L, Beck MJ, Rashkeev SN, Hadjisavvas G, Batyrev IG et al. Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference. 2009. p. 48-55. 5331355. (ESSDERC 2009 - Proceedings of the 39th European Solid-State Device Research Conference). https://doi.org/10.1109/ESSDERC.2009.5331355