Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisawas, I. Batyrev, B. Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO 2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO 2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO 2 band gap.

Original languageEnglish (US)
Title of host publicationSilicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10
Pages319-337
Number of pages19
Edition2
DOIs
StatePublished - Dec 1 2009
EventInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society - San Francisco, CA, United States
Duration: May 24 2009May 29 2009

Publication series

NameECS Transactions
Number2
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society
CountryUnited States
CitySan Francisco, CA
Period5/24/095/29/09

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisawas, G., Batyrev, I., Tuttle, B., Marinopoulos, A. G., Zhou, X. J., Fleetwood, D. M., & Schrimpf, R. D. (2009). Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10 (2 ed., pp. 319-337). (ECS Transactions; Vol. 19, No. 2). https://doi.org/10.1149/1.3122099