Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, Blair Richard Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

Original languageEnglish (US)
Title of host publicationESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference
Pages76-83
Number of pages8
DOIs
StatePublished - Dec 1 2009
Event35th European Solid-State Circuits Conference, ESSCIRC 2009 - Athens, Greece
Duration: Sep 14 2009Sep 18 2009

Publication series

NameESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference

Other

Other35th European Solid-State Circuits Conference, ESSCIRC 2009
CountryGreece
CityAthens
Period9/14/099/18/09

Fingerprint

Radiation effects
Microelectronics
Physics
Aging of materials
Electron mobility
Electron energy levels
Dosimetry
Energy gap
Doping (additives)
Hydrogen
Defects
Ions

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisavvas, G., Batyrev, I. G., ... Schrimpf, R. D. (2009). Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference (pp. 76-83). [5325931] (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2009.5325931
Pantelides, Sokrates T. ; Tsetseris, L. ; Beck, M. J. ; Rashkeev, S. N. ; Hadjisavvas, G. ; Batyrev, I. G. ; Tuttle, Blair Richard ; Marinopoulos, A. G. ; Zhou, X. J. ; Fleetwood, D. M. ; Schrimpf, R. D. / Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. pp. 76-83 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference).
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abstract = "The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as Negative Bias Temperature Instability (NBTI) and radiation effects, such as Enhanced Low Dose Radiation Sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.",
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Pantelides, ST, Tsetseris, L, Beck, MJ, Rashkeev, SN, Hadjisavvas, G, Batyrev, IG, Tuttle, BR, Marinopoulos, AG, Zhou, XJ, Fleetwood, DM & Schrimpf, RD 2009, Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. in ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference., 5325931, ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference, pp. 76-83, 35th European Solid-State Circuits Conference, ESSCIRC 2009, Athens, Greece, 9/14/09. https://doi.org/10.1109/ESSCIRC.2009.5325931

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. / Pantelides, Sokrates T.; Tsetseris, L.; Beck, M. J.; Rashkeev, S. N.; Hadjisavvas, G.; Batyrev, I. G.; Tuttle, Blair Richard; Marinopoulos, A. G.; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.

ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. p. 76-83 5325931 (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Pantelides ST, Tsetseris L, Beck MJ, Rashkeev SN, Hadjisavvas G, Batyrev IG et al. Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference. 2009. p. 76-83. 5325931. (ESSCIRC 2009 - Proceedings of the 35th European Solid-State Circuits Conference). https://doi.org/10.1109/ESSCIRC.2009.5325931