Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, S. N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, Blair Richard Tuttle, A. G. Marinopoulos, X. J. Zhou, D. M. Fleetwood, R. D. Schrimpf

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

Original languageEnglish (US)
Pages (from-to)841-848
Number of pages8
JournalSolid-State Electronics
Volume54
Issue number9
DOIs
StatePublished - Sep 1 2010

Fingerprint

Radiation effects
radiation effects
microelectronics
Microelectronics
Physics
Aging of materials
engineering
physics
scale models
electron mobility
deactivation
energy levels
dosage
augmentation
Electron mobility
defects
hydrogen
radiation
Electron energy levels
Dosimetry

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Pantelides, S. T., Tsetseris, L., Beck, M. J., Rashkeev, S. N., Hadjisavvas, G., Batyrev, I. G., ... Schrimpf, R. D. (2010). Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. Solid-State Electronics, 54(9), 841-848. https://doi.org/10.1016/j.sse.2010.04.041
Pantelides, Sokrates T. ; Tsetseris, L. ; Beck, M. J. ; Rashkeev, S. N. ; Hadjisavvas, G. ; Batyrev, I. G. ; Tuttle, Blair Richard ; Marinopoulos, A. G. ; Zhou, X. J. ; Fleetwood, D. M. ; Schrimpf, R. D. / Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. In: Solid-State Electronics. 2010 ; Vol. 54, No. 9. pp. 841-848.
@article{689e3000885d4dedaf76eca71ebc5071,
title = "Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling",
abstract = "The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.",
author = "Pantelides, {Sokrates T.} and L. Tsetseris and Beck, {M. J.} and Rashkeev, {S. N.} and G. Hadjisavvas and Batyrev, {I. G.} and Tuttle, {Blair Richard} and Marinopoulos, {A. G.} and Zhou, {X. J.} and Fleetwood, {D. M.} and Schrimpf, {R. D.}",
year = "2010",
month = "9",
day = "1",
doi = "10.1016/j.sse.2010.04.041",
language = "English (US)",
volume = "54",
pages = "841--848",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier Limited",
number = "9",

}

Pantelides, ST, Tsetseris, L, Beck, MJ, Rashkeev, SN, Hadjisavvas, G, Batyrev, IG, Tuttle, BR, Marinopoulos, AG, Zhou, XJ, Fleetwood, DM & Schrimpf, RD 2010, 'Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling', Solid-State Electronics, vol. 54, no. 9, pp. 841-848. https://doi.org/10.1016/j.sse.2010.04.041

Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling. / Pantelides, Sokrates T.; Tsetseris, L.; Beck, M. J.; Rashkeev, S. N.; Hadjisavvas, G.; Batyrev, I. G.; Tuttle, Blair Richard; Marinopoulos, A. G.; Zhou, X. J.; Fleetwood, D. M.; Schrimpf, R. D.

In: Solid-State Electronics, Vol. 54, No. 9, 01.09.2010, p. 841-848.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Performance, reliability, radiation effects, and aging issues in microelectronics - From atomic-scale physics to engineering-level modeling

AU - Pantelides, Sokrates T.

AU - Tsetseris, L.

AU - Beck, M. J.

AU - Rashkeev, S. N.

AU - Hadjisavvas, G.

AU - Batyrev, I. G.

AU - Tuttle, Blair Richard

AU - Marinopoulos, A. G.

AU - Zhou, X. J.

AU - Fleetwood, D. M.

AU - Schrimpf, R. D.

PY - 2010/9/1

Y1 - 2010/9/1

N2 - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

AB - The development of engineering-level models requires adoption of physical mechanisms that underlie observed phenomena. This paper reviews several cases where parameter-free, atomic-scale, quantum mechanical calculations led to the identification of specific physical mechanisms for phenomena relating to performance, reliability, radiation effects, and aging issues in microelectronics. More specifically, we review recent calculations of electron mobilities that are based on atomic-scale models of the Si-SiO2 interface and elucidate the origin of strain-induced mobility enhancement. We then review extensive work that highlights the role of hydrogen as the primary agent of reliability phenomena such as negative bias temperature instability (NBTI) and radiation effects, such as enhanced low-dose radiation sensitivity (ELDRS) and dopant deactivation. Finally, we review atomic-scale simulations of recoils induced by energetic ions in Si and SiO2. The latter provide a natural explanation for single-event gate rupture (SEGR) in terms of defects with energy levels in the SiO2 band gap.

UR - http://www.scopus.com/inward/record.url?scp=77954218607&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77954218607&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.04.041

DO - 10.1016/j.sse.2010.04.041

M3 - Article

VL - 54

SP - 841

EP - 848

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -