PERFORMANCE STUDY OF p + /n AND n + /p SOLAR CELL STRUCTURES ON POLYCRYSTALLINE MATERIAL.

P. Lester, S. J. Fonash, S Ashok

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

The possibility is explored of obtaining an analytical solution for the minority carrier distribution in a grain under illumination. The goal is to be able to analytically undertake performance study of p** plus /n and n** plus /p solar cell structures on polycrystalline material. It is shown that an analytical solution can be obtained in terms of Fourier and Fourier-Bessel series for a columnar grain under very general conditions. These conditions allow for grain boundary penetration from the top of a variable depth, grain boundary penetration from the bottom of a variable depth, and an arbitrary degree of passivation in the remainder of the grain boundary.

Original languageEnglish (US)
Pages (from-to)82-85
Number of pages4
JournalConference Record of the IEEE Photovoltaic Specialists Conference
StatePublished - Jan 1 1980
EventConf Rec IEEE Photovoltaic Spec Conf 14th - San Diego, CA, USA
Duration: Jan 7 1980Jan 10 1980

Fingerprint

Polycrystalline materials
Solar cells
Grain boundaries
Passivation
Lighting

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

Cite this

@article{48a071bf69be46e484e2802871b1bc78,
title = "PERFORMANCE STUDY OF p + /n AND n + /p SOLAR CELL STRUCTURES ON POLYCRYSTALLINE MATERIAL.",
abstract = "The possibility is explored of obtaining an analytical solution for the minority carrier distribution in a grain under illumination. The goal is to be able to analytically undertake performance study of p** plus /n and n** plus /p solar cell structures on polycrystalline material. It is shown that an analytical solution can be obtained in terms of Fourier and Fourier-Bessel series for a columnar grain under very general conditions. These conditions allow for grain boundary penetration from the top of a variable depth, grain boundary penetration from the bottom of a variable depth, and an arbitrary degree of passivation in the remainder of the grain boundary.",
author = "P. Lester and Fonash, {S. J.} and S Ashok",
year = "1980",
month = "1",
day = "1",
language = "English (US)",
pages = "82--85",
journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",
issn = "0160-8371",
publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

PERFORMANCE STUDY OF p + /n AND n + /p SOLAR CELL STRUCTURES ON POLYCRYSTALLINE MATERIAL. / Lester, P.; Fonash, S. J.; Ashok, S.

In: Conference Record of the IEEE Photovoltaic Specialists Conference, 01.01.1980, p. 82-85.

Research output: Contribution to journalConference article

TY - JOUR

T1 - PERFORMANCE STUDY OF p + /n AND n + /p SOLAR CELL STRUCTURES ON POLYCRYSTALLINE MATERIAL.

AU - Lester, P.

AU - Fonash, S. J.

AU - Ashok, S

PY - 1980/1/1

Y1 - 1980/1/1

N2 - The possibility is explored of obtaining an analytical solution for the minority carrier distribution in a grain under illumination. The goal is to be able to analytically undertake performance study of p** plus /n and n** plus /p solar cell structures on polycrystalline material. It is shown that an analytical solution can be obtained in terms of Fourier and Fourier-Bessel series for a columnar grain under very general conditions. These conditions allow for grain boundary penetration from the top of a variable depth, grain boundary penetration from the bottom of a variable depth, and an arbitrary degree of passivation in the remainder of the grain boundary.

AB - The possibility is explored of obtaining an analytical solution for the minority carrier distribution in a grain under illumination. The goal is to be able to analytically undertake performance study of p** plus /n and n** plus /p solar cell structures on polycrystalline material. It is shown that an analytical solution can be obtained in terms of Fourier and Fourier-Bessel series for a columnar grain under very general conditions. These conditions allow for grain boundary penetration from the top of a variable depth, grain boundary penetration from the bottom of a variable depth, and an arbitrary degree of passivation in the remainder of the grain boundary.

UR - http://www.scopus.com/inward/record.url?scp=0018919486&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018919486&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0018919486

SP - 82

EP - 85

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

SN - 0160-8371

ER -