Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates

Jennifer Lynn Gray, R. Hull, J. A. Floro

Research output: Contribution to journalArticle

41 Citations (Scopus)

Abstract

Ex situ focused ion-beam (FIB) patterning of arrays of holes on Si (001) substrates results in the subsequent formation of SiGe quantum dot molecules at each of the patterned sites during heteroepitaxial growth under kinetically limited growth conditions where island formation is constrained. These quantum dot molecules are fourfold self-assembled island nanostructures bound by a central pit. During growth, material is ejected from the patterned sites forming the pits that in turn provide favorable sites for the cooperative nucleation of {105} faceted islands. The degree of order and quality of the resulting structures depend on many factors including growth temperature, ion-beam milling depth, Si buffer thickness, and spacings between FIB exposed sites. This technique provides a method for controlling the lateral placement of semiconductor nanostructures, which could be used in applications such as complex nanoelectronic architectures.

Original languageEnglish (US)
Article number084312
JournalJournal of Applied Physics
Volume100
Issue number8
DOIs
StatePublished - Nov 7 2006

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quantum dots
ion beams
molecules
buffers
spacing
nucleation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{1c2b9f746fff472996fd2d26329f2dce,
title = "Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates",
abstract = "Ex situ focused ion-beam (FIB) patterning of arrays of holes on Si (001) substrates results in the subsequent formation of SiGe quantum dot molecules at each of the patterned sites during heteroepitaxial growth under kinetically limited growth conditions where island formation is constrained. These quantum dot molecules are fourfold self-assembled island nanostructures bound by a central pit. During growth, material is ejected from the patterned sites forming the pits that in turn provide favorable sites for the cooperative nucleation of {105} faceted islands. The degree of order and quality of the resulting structures depend on many factors including growth temperature, ion-beam milling depth, Si buffer thickness, and spacings between FIB exposed sites. This technique provides a method for controlling the lateral placement of semiconductor nanostructures, which could be used in applications such as complex nanoelectronic architectures.",
author = "Gray, {Jennifer Lynn} and R. Hull and Floro, {J. A.}",
year = "2006",
month = "11",
day = "7",
doi = "10.1063/1.2358003",
language = "English (US)",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates. / Gray, Jennifer Lynn; Hull, R.; Floro, J. A.

In: Journal of Applied Physics, Vol. 100, No. 8, 084312, 07.11.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Periodic arrays of epitaxial self-assembled SiGe quantum dot molecules grown on patterned Si substrates

AU - Gray, Jennifer Lynn

AU - Hull, R.

AU - Floro, J. A.

PY - 2006/11/7

Y1 - 2006/11/7

N2 - Ex situ focused ion-beam (FIB) patterning of arrays of holes on Si (001) substrates results in the subsequent formation of SiGe quantum dot molecules at each of the patterned sites during heteroepitaxial growth under kinetically limited growth conditions where island formation is constrained. These quantum dot molecules are fourfold self-assembled island nanostructures bound by a central pit. During growth, material is ejected from the patterned sites forming the pits that in turn provide favorable sites for the cooperative nucleation of {105} faceted islands. The degree of order and quality of the resulting structures depend on many factors including growth temperature, ion-beam milling depth, Si buffer thickness, and spacings between FIB exposed sites. This technique provides a method for controlling the lateral placement of semiconductor nanostructures, which could be used in applications such as complex nanoelectronic architectures.

AB - Ex situ focused ion-beam (FIB) patterning of arrays of holes on Si (001) substrates results in the subsequent formation of SiGe quantum dot molecules at each of the patterned sites during heteroepitaxial growth under kinetically limited growth conditions where island formation is constrained. These quantum dot molecules are fourfold self-assembled island nanostructures bound by a central pit. During growth, material is ejected from the patterned sites forming the pits that in turn provide favorable sites for the cooperative nucleation of {105} faceted islands. The degree of order and quality of the resulting structures depend on many factors including growth temperature, ion-beam milling depth, Si buffer thickness, and spacings between FIB exposed sites. This technique provides a method for controlling the lateral placement of semiconductor nanostructures, which could be used in applications such as complex nanoelectronic architectures.

UR - http://www.scopus.com/inward/record.url?scp=33750496279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33750496279&partnerID=8YFLogxK

U2 - 10.1063/1.2358003

DO - 10.1063/1.2358003

M3 - Article

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 8

M1 - 084312

ER -