Permeation of hydrogen into silicon during low-energy hydrogen ion beam bombardment

Mark William Horn, J. M. Heddleson, S. J. Fonash

Research output: Contribution to journalArticlepeer-review

22 Scopus citations

Abstract

In this study we examine the permeating of hydrogen into p-type silicon during low-energy hydrogen ion beam bombardment by monitoring boron doping deactivation. This examination is done for various times and two different exposure temperatures. In addition we explore the effect of temperature during subsequent isochronal anneals on the recovery of silicon exposed to a hydrogen ion beam. As a result of these studies, it is found that there are two distinct permeation regions. Each may be characterized by its own apparent diffusion coefficient, activation energy, and recovery process.

Original languageEnglish (US)
Pages (from-to)490-492
Number of pages3
JournalApplied Physics Letters
Volume51
Issue number7
DOIs
StatePublished - Dec 1 1987

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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