Persistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctions

M. I. Nathan, T. N. Jackson, P. D. Kirchner, E. E. Mendez, G. D. Pettit, J. M. Woodall

Research output: Contribution to journalArticlepeer-review

23 Scopus citations

Abstract

The dependence on photon energy of the persistent photoconductivity (PPC) in selectively doped high mobility Al0.3Ga0.7As-GaAs heterostructures has been measured at temperatures below 80 K. A decrease in conductivity due to light exposure at one wavelength after exposure to light at another wavelength - photo-quenching - is also found. It is concluded that deep centers in GaAs and AlGaAs other than the DX center in AlGaAs are mainly responsible for PPC.

Original languageEnglish (US)
Pages (from-to)719-725
Number of pages7
JournalJournal of Electronic Materials
Volume12
Issue number4
DOIs
StatePublished - Jul 1 1983

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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