We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O 3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al 2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.
All Science Journal Classification (ASJC) codes
- Materials Science(all)