PH-controlled selective etching of Al2O3 over ZnO

Kaige G. Sun, Yuanyuan V. Li, David B. Saint John, Thomas N. Jackson

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We describe pH-controlled selective etching of atomic layer deposition (ALD) Al2O3 over ZnO. Film thickness as a function of etch exposure was measured by spectroscopic ellipsometry. We find that alkaline aqueous solutions with pH between about 9 and 12 will etch Al2O 3 at useful rate with minimal attack of ZnO. Highly selective etching of Al2O3 over ZnO (selectivity >400:1) and an Al 2O3 etch rate of ∼50 nm/min can be obtained using a pH 12 etch solution at 60 °C.

Original languageEnglish (US)
Pages (from-to)7028-7031
Number of pages4
JournalACS Applied Materials and Interfaces
Volume6
Issue number10
DOIs
StatePublished - May 28 2014

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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