Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device

J. R. Nasr, J. J. Cordell, R. L. Gurunathan, Jeffrey Brownson, Mark William Horn

Research output: Contribution to journalArticle

Abstract

Tin (II) Monosufide (SnS) is an interesting material for thin film photovoltaics. n- and p-type sputter-deposited SnSx have been investigated for use in a homojunction photovoltaic device. Post-deposition vacuum heat treatment of as-deposited amorphous films was found to produce n-type SnSx and p-type SnS depending upon in situ vacuum anneal time and temperature. Annealing temperatures varied from 300°C to 400°C at durations from 20 min to 60 min under high vacuum. Results show clear photoresponse for both n-type and p-type using Pd contacts.

Original languageEnglish (US)
Pages (from-to)1215-1222
Number of pages8
JournalJournal of Electronic Materials
Volume46
Issue number2
DOIs
StatePublished - Feb 1 2017

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homojunctions
Phase control
phase control
Vacuum
Annealing
Vacuum deposition
annealing
vacuum deposition
Tin
Amorphous films
high vacuum
tin
heat treatment
Heat treatment
Thin films
Temperature
vacuum
temperature
thin films

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

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Phase Control of RF Sputtered SnSx with Post-Deposition Annealing for a Pseudo-Homojunction Photovoltaic Device. / Nasr, J. R.; Cordell, J. J.; Gurunathan, R. L.; Brownson, Jeffrey; Horn, Mark William.

In: Journal of Electronic Materials, Vol. 46, No. 2, 01.02.2017, p. 1215-1222.

Research output: Contribution to journalArticle

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AU - Nasr, J. R.

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