Phase development and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 epitaxial films

Takeshi Yoshimura, Susan E. Trolier-McKinstry

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The growth and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 (PYbN-PT) epitaxial films were investigated. PYbN-PT epitaxial films with SrRuO3 bottom electrodes were grown by pulsed laser deposition. Optimization of the growth conditions for the PYbNPT epitaxial films was carried out on (100) SrRuO3(100) LaAlO3 substrates using the (50/50) composition target. It was found that formation of pyrochlore phase could be caused not only by low growth temperatures or lead deficiency, but also by poor surface condition of the SrRuO3 bottom electrodes. (001) PYbN-PT epitaxial films with good crystalline quality were obtained for a range of deposition rates (60-100 nm/min) and temperatures (620-680°C) after vacuum annealing the SrRuO 3 bottom electrodes. The ferroelectric and piezoelectric properties of 1 μm-thick PYbN-PT epitaxial films with (50/50) and (60/40) compositions and with (001) and (111) orientations were investigated using (100) LaAlO 3, (100) SrTiO3, and (111) SrTiO3 substrates with SrRuO3 bottom electrodes. The highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31.f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. The transition temperature of the (001) PYbN-PT (50/50) film was about 380°C. Because of the degradation of the target during the deposition, a 3 nm-thick film was prepared by three depositions (1 μm each layer). The 3 μm-thick film exhibited a higher e31.f coefficient of -19 C/m2.

Original languageEnglish (US)
Pages (from-to)33-42
Number of pages10
JournalIntegrated Ferroelectrics
Volume50
DOIs
StatePublished - Dec 1 2002

Fingerprint

Epitaxial films
Electric properties
electrical properties
Electrodes
Thick films
electrodes
thick films
Remanence
Growth temperature
Substrates
Pulsed laser deposition
Deposition rates
Chemical analysis
Superconducting transition temperature
Ferroelectric materials
coefficients
Vacuum
Annealing
Crystalline materials
pulsed laser deposition

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Phase development and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 epitaxial films",
abstract = "The growth and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 (PYbN-PT) epitaxial films were investigated. PYbN-PT epitaxial films with SrRuO3 bottom electrodes were grown by pulsed laser deposition. Optimization of the growth conditions for the PYbNPT epitaxial films was carried out on (100) SrRuO3(100) LaAlO3 substrates using the (50/50) composition target. It was found that formation of pyrochlore phase could be caused not only by low growth temperatures or lead deficiency, but also by poor surface condition of the SrRuO3 bottom electrodes. (001) PYbN-PT epitaxial films with good crystalline quality were obtained for a range of deposition rates (60-100 nm/min) and temperatures (620-680°C) after vacuum annealing the SrRuO 3 bottom electrodes. The ferroelectric and piezoelectric properties of 1 μm-thick PYbN-PT epitaxial films with (50/50) and (60/40) compositions and with (001) and (111) orientations were investigated using (100) LaAlO 3, (100) SrTiO3, and (111) SrTiO3 substrates with SrRuO3 bottom electrodes. The highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31.f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. The transition temperature of the (001) PYbN-PT (50/50) film was about 380°C. Because of the degradation of the target during the deposition, a 3 nm-thick film was prepared by three depositions (1 μm each layer). The 3 μm-thick film exhibited a higher e31.f coefficient of -19 C/m2.",
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Phase development and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 epitaxial films. / Yoshimura, Takeshi; Trolier-McKinstry, Susan E.

In: Integrated Ferroelectrics, Vol. 50, 01.12.2002, p. 33-42.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase development and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 epitaxial films

AU - Yoshimura, Takeshi

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N2 - The growth and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 (PYbN-PT) epitaxial films were investigated. PYbN-PT epitaxial films with SrRuO3 bottom electrodes were grown by pulsed laser deposition. Optimization of the growth conditions for the PYbNPT epitaxial films was carried out on (100) SrRuO3(100) LaAlO3 substrates using the (50/50) composition target. It was found that formation of pyrochlore phase could be caused not only by low growth temperatures or lead deficiency, but also by poor surface condition of the SrRuO3 bottom electrodes. (001) PYbN-PT epitaxial films with good crystalline quality were obtained for a range of deposition rates (60-100 nm/min) and temperatures (620-680°C) after vacuum annealing the SrRuO 3 bottom electrodes. The ferroelectric and piezoelectric properties of 1 μm-thick PYbN-PT epitaxial films with (50/50) and (60/40) compositions and with (001) and (111) orientations were investigated using (100) LaAlO 3, (100) SrTiO3, and (111) SrTiO3 substrates with SrRuO3 bottom electrodes. The highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31.f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. The transition temperature of the (001) PYbN-PT (50/50) film was about 380°C. Because of the degradation of the target during the deposition, a 3 nm-thick film was prepared by three depositions (1 μm each layer). The 3 μm-thick film exhibited a higher e31.f coefficient of -19 C/m2.

AB - The growth and electrical properties of Pb(Yb1/2Nb 1/2)O3-PbTiO3 (PYbN-PT) epitaxial films were investigated. PYbN-PT epitaxial films with SrRuO3 bottom electrodes were grown by pulsed laser deposition. Optimization of the growth conditions for the PYbNPT epitaxial films was carried out on (100) SrRuO3(100) LaAlO3 substrates using the (50/50) composition target. It was found that formation of pyrochlore phase could be caused not only by low growth temperatures or lead deficiency, but also by poor surface condition of the SrRuO3 bottom electrodes. (001) PYbN-PT epitaxial films with good crystalline quality were obtained for a range of deposition rates (60-100 nm/min) and temperatures (620-680°C) after vacuum annealing the SrRuO 3 bottom electrodes. The ferroelectric and piezoelectric properties of 1 μm-thick PYbN-PT epitaxial films with (50/50) and (60/40) compositions and with (001) and (111) orientations were investigated using (100) LaAlO 3, (100) SrTiO3, and (111) SrTiO3 substrates with SrRuO3 bottom electrodes. The highest remanent polarization (29 μC/cm2) and effective piezoelectric coefficient e31.f (-14 C/m2) were observed in the (001) PYbN-PT (50/50) film. The transition temperature of the (001) PYbN-PT (50/50) film was about 380°C. Because of the degradation of the target during the deposition, a 3 nm-thick film was prepared by three depositions (1 μm each layer). The 3 μm-thick film exhibited a higher e31.f coefficient of -19 C/m2.

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