Phase diagram and domain splitting in thin ferroelectric films with incommensurate phase

A. N. Morozovska, E. A. Eliseev, Jianjun Wang, G. S. Svechnikov, Yu M. Vysochanskii, Venkatraman Gopalan, Long-qing Chen

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modeling of the temperature and thickness dependencies of the period of incommensurate 180° -domain structures appeared in thin films covered with perfect electrodes. It is found that the transition temperature from the paraelectric into the incommensurate phase as well as the period of incommensurate domain structure strongly depend on the film thickness, depolarization field contribution, surface and gradient energy. The results may provide insight on the temperature dependence of domain structures in nanosized ferroics with inherent incommensurate phases.

Original languageEnglish (US)
Article number195437
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number19
DOIs
StatePublished - May 27 2010

Fingerprint

Ferroelectric thin films
Phase diagrams
phase diagrams
Depolarization
Superconducting transition temperature
Film thickness
Semiconductor materials
depolarization
Thin films
Temperature
Electrodes
surface energy
film thickness
transition temperature
gradients
temperature dependence
electrodes
energy
thin films
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

@article{ad05afc49c924006bd58c61b6ac014c4,
title = "Phase diagram and domain splitting in thin ferroelectric films with incommensurate phase",
abstract = "We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modeling of the temperature and thickness dependencies of the period of incommensurate 180° -domain structures appeared in thin films covered with perfect electrodes. It is found that the transition temperature from the paraelectric into the incommensurate phase as well as the period of incommensurate domain structure strongly depend on the film thickness, depolarization field contribution, surface and gradient energy. The results may provide insight on the temperature dependence of domain structures in nanosized ferroics with inherent incommensurate phases.",
author = "Morozovska, {A. N.} and Eliseev, {E. A.} and Jianjun Wang and Svechnikov, {G. S.} and Vysochanskii, {Yu M.} and Venkatraman Gopalan and Long-qing Chen",
year = "2010",
month = "5",
day = "27",
doi = "10.1103/PhysRevB.81.195437",
language = "English (US)",
volume = "81",
journal = "Physical Review B-Condensed Matter",
issn = "1098-0121",
publisher = "American Physical Society",
number = "19",

}

Phase diagram and domain splitting in thin ferroelectric films with incommensurate phase. / Morozovska, A. N.; Eliseev, E. A.; Wang, Jianjun; Svechnikov, G. S.; Vysochanskii, Yu M.; Gopalan, Venkatraman; Chen, Long-qing.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 19, 195437, 27.05.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase diagram and domain splitting in thin ferroelectric films with incommensurate phase

AU - Morozovska, A. N.

AU - Eliseev, E. A.

AU - Wang, Jianjun

AU - Svechnikov, G. S.

AU - Vysochanskii, Yu M.

AU - Gopalan, Venkatraman

AU - Chen, Long-qing

PY - 2010/5/27

Y1 - 2010/5/27

N2 - We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modeling of the temperature and thickness dependencies of the period of incommensurate 180° -domain structures appeared in thin films covered with perfect electrodes. It is found that the transition temperature from the paraelectric into the incommensurate phase as well as the period of incommensurate domain structure strongly depend on the film thickness, depolarization field contribution, surface and gradient energy. The results may provide insight on the temperature dependence of domain structures in nanosized ferroics with inherent incommensurate phases.

AB - We studied the phase diagram of thin ferroelectric films with incommensurate phases and semiconductor properties within the framework of Landau-Ginzburg-Devonshire theory. We performed both analytical calculations and phase-field modeling of the temperature and thickness dependencies of the period of incommensurate 180° -domain structures appeared in thin films covered with perfect electrodes. It is found that the transition temperature from the paraelectric into the incommensurate phase as well as the period of incommensurate domain structure strongly depend on the film thickness, depolarization field contribution, surface and gradient energy. The results may provide insight on the temperature dependence of domain structures in nanosized ferroics with inherent incommensurate phases.

UR - http://www.scopus.com/inward/record.url?scp=77955736706&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955736706&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.81.195437

DO - 10.1103/PhysRevB.81.195437

M3 - Article

VL - 81

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 1098-0121

IS - 19

M1 - 195437

ER -