Phase equilibria in the semiconductor-rich portions of the Pt-Ti-Ga-As and Pt-Ti-In-As systems

K. A. Whitmire, S. E. Mohney

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

Phase equilibria at 700 °C in the GaAs-rich portion of the Pt-Ti-Ga-As system and the InAs-rich portion of the Pt-Ti-In-As system have been investigated. These studies were undertaken to provide a better understanding of the metallurgy of contacts that contain both Pt and Ti on the semiconductors GaAs and InAs. The phases present in equilibrated samples were characterized through X-ray diffraction and in some cases electron probe microanalysis. This study reveals a tendency for Ti to form TiAs and Pt to form gallides (indides) in thermodynamic equilibrium with GaAs (InAs) over a wide range of Pt : Ti ratios. Thermodynamic stability of the semiconductor PtAs2, which could play a role in the electrical characteristics of Ti/Pt/III-As contacts, occurs when the Pt : Ti ratio exceeds 1 : 1 (1 : 2) on GaAs (InAs).

Original languageEnglish (US)
Pages (from-to)357-360
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume9
Issue number5
DOIs
StatePublished - Oct 1998

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Phase equilibria in the semiconductor-rich portions of the Pt-Ti-Ga-As and Pt-Ti-In-As systems'. Together they form a unique fingerprint.

Cite this