Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

Atanu K. Saha, Kai Ni, Sourav Dutta, Suman Datta, Sumeet Kumar Gupta

Research output: Contribution to journalArticle

Abstract

In this work, we investigate the accumulative polarization (P) switching characteristics in ferroelectric (FE) thin films under the influence of sequential sub-coercive electric-field pulses. Performing the dynamic phase-field simulation (based on time-dependent Landau-Ginzburg model) and experimental measurement on Hf 0.4 Zr 0.6 O 2 (HZO), we analyze the electric field induced domain-wall (DW) motion and the resultant P accumulation process in FE. According to our analysis, even in the absence of an applied electric field, the DW can potentially undergo spontaneous motion. Such a DW instability leads to spontaneous P-excitation and relaxation processes, which play a pivotal role in accumulative P-switching in an FE grain. We show that the extent of such P accumulation increases with the increase in the applied electric field, increase in excitation time and decrease in relaxation time. Finally, by considering an ensemble of grains with local and global coercive field distributions, we model the P-accumulation process in a large area HZO sample. In such a multi-grain scenario, the dependency of P accumulation on the applied electric field pulse attributes follows similar features as that of a single-grain, although the spontaneous processes (excitation/relaxation) are less prominent in large area sample.

Original languageEnglish (US)
Article number202903
JournalApplied Physics Letters
Volume114
Issue number20
DOIs
StatePublished - May 20 2019

Fingerprint

electric fields
polarization
domain wall
excitation
pulses
relaxation time
thin films
simulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Saha, Atanu K. ; Ni, Kai ; Dutta, Sourav ; Datta, Suman ; Gupta, Sumeet Kumar. / Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO. In: Applied Physics Letters. 2019 ; Vol. 114, No. 20.
@article{79d8c1b352d54638ba257cdd8fe62e3c,
title = "Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO",
abstract = "In this work, we investigate the accumulative polarization (P) switching characteristics in ferroelectric (FE) thin films under the influence of sequential sub-coercive electric-field pulses. Performing the dynamic phase-field simulation (based on time-dependent Landau-Ginzburg model) and experimental measurement on Hf 0.4 Zr 0.6 O 2 (HZO), we analyze the electric field induced domain-wall (DW) motion and the resultant P accumulation process in FE. According to our analysis, even in the absence of an applied electric field, the DW can potentially undergo spontaneous motion. Such a DW instability leads to spontaneous P-excitation and relaxation processes, which play a pivotal role in accumulative P-switching in an FE grain. We show that the extent of such P accumulation increases with the increase in the applied electric field, increase in excitation time and decrease in relaxation time. Finally, by considering an ensemble of grains with local and global coercive field distributions, we model the P-accumulation process in a large area HZO sample. In such a multi-grain scenario, the dependency of P accumulation on the applied electric field pulse attributes follows similar features as that of a single-grain, although the spontaneous processes (excitation/relaxation) are less prominent in large area sample.",
author = "Saha, {Atanu K.} and Kai Ni and Sourav Dutta and Suman Datta and Gupta, {Sumeet Kumar}",
year = "2019",
month = "5",
day = "20",
doi = "10.1063/1.5092707",
language = "English (US)",
volume = "114",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "20",

}

Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO. / Saha, Atanu K.; Ni, Kai; Dutta, Sourav; Datta, Suman; Gupta, Sumeet Kumar.

In: Applied Physics Letters, Vol. 114, No. 20, 202903, 20.05.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Phase field modeling of domain dynamics and polarization accumulation in ferroelectric HZO

AU - Saha, Atanu K.

AU - Ni, Kai

AU - Dutta, Sourav

AU - Datta, Suman

AU - Gupta, Sumeet Kumar

PY - 2019/5/20

Y1 - 2019/5/20

N2 - In this work, we investigate the accumulative polarization (P) switching characteristics in ferroelectric (FE) thin films under the influence of sequential sub-coercive electric-field pulses. Performing the dynamic phase-field simulation (based on time-dependent Landau-Ginzburg model) and experimental measurement on Hf 0.4 Zr 0.6 O 2 (HZO), we analyze the electric field induced domain-wall (DW) motion and the resultant P accumulation process in FE. According to our analysis, even in the absence of an applied electric field, the DW can potentially undergo spontaneous motion. Such a DW instability leads to spontaneous P-excitation and relaxation processes, which play a pivotal role in accumulative P-switching in an FE grain. We show that the extent of such P accumulation increases with the increase in the applied electric field, increase in excitation time and decrease in relaxation time. Finally, by considering an ensemble of grains with local and global coercive field distributions, we model the P-accumulation process in a large area HZO sample. In such a multi-grain scenario, the dependency of P accumulation on the applied electric field pulse attributes follows similar features as that of a single-grain, although the spontaneous processes (excitation/relaxation) are less prominent in large area sample.

AB - In this work, we investigate the accumulative polarization (P) switching characteristics in ferroelectric (FE) thin films under the influence of sequential sub-coercive electric-field pulses. Performing the dynamic phase-field simulation (based on time-dependent Landau-Ginzburg model) and experimental measurement on Hf 0.4 Zr 0.6 O 2 (HZO), we analyze the electric field induced domain-wall (DW) motion and the resultant P accumulation process in FE. According to our analysis, even in the absence of an applied electric field, the DW can potentially undergo spontaneous motion. Such a DW instability leads to spontaneous P-excitation and relaxation processes, which play a pivotal role in accumulative P-switching in an FE grain. We show that the extent of such P accumulation increases with the increase in the applied electric field, increase in excitation time and decrease in relaxation time. Finally, by considering an ensemble of grains with local and global coercive field distributions, we model the P-accumulation process in a large area HZO sample. In such a multi-grain scenario, the dependency of P accumulation on the applied electric field pulse attributes follows similar features as that of a single-grain, although the spontaneous processes (excitation/relaxation) are less prominent in large area sample.

UR - http://www.scopus.com/inward/record.url?scp=85066017939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85066017939&partnerID=8YFLogxK

U2 - 10.1063/1.5092707

DO - 10.1063/1.5092707

M3 - Article

VL - 114

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 20

M1 - 202903

ER -