Phase-field simulation of 2-D Ostwald ripening in the high volume fraction regime

Danan Fan, S. P. Chen, Long-qing Chen, P. W. Voorhees

Research output: Contribution to journalArticle

80 Citations (Scopus)

Abstract

The microstructural evolution and kinetics of Ostwald ripening were studied in the high volume fraction regime by numerically solving the time-dependent Ginzburg-Landau (TDGL) and Cahn-Hilliard equations. It is shown that the growth exponent m is equal to 3, independent of the volume fraction, and the kinetic coefficient k increases as the volume fraction increases. The shape of size distributions changes significantly with increasing volume fraction of the coarsening phase; the skewness changes continuously from negative to positive while the kurtosis decreases in the low fraction regime and increases in the high volume fraction regime.

Original languageEnglish (US)
Pages (from-to)1895-1907
Number of pages13
JournalActa Materialia
Volume50
Issue number8
DOIs
StatePublished - May 8 2002

Fingerprint

Ostwald ripening
Volume fraction
Kinetics
Microstructural evolution
Coarsening

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Cite this

Fan, Danan ; Chen, S. P. ; Chen, Long-qing ; Voorhees, P. W. / Phase-field simulation of 2-D Ostwald ripening in the high volume fraction regime. In: Acta Materialia. 2002 ; Vol. 50, No. 8. pp. 1895-1907.
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Phase-field simulation of 2-D Ostwald ripening in the high volume fraction regime. / Fan, Danan; Chen, S. P.; Chen, Long-qing; Voorhees, P. W.

In: Acta Materialia, Vol. 50, No. 8, 08.05.2002, p. 1895-1907.

Research output: Contribution to journalArticle

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