Phase-field simulation of 2-D Ostwald ripening in the high volume fraction regime

Danan Fan, S. P. Chen, Long Qing Chen, P. W. Voorhees

Research output: Contribution to journalArticle

88 Scopus citations

Abstract

The microstructural evolution and kinetics of Ostwald ripening were studied in the high volume fraction regime by numerically solving the time-dependent Ginzburg-Landau (TDGL) and Cahn-Hilliard equations. It is shown that the growth exponent m is equal to 3, independent of the volume fraction, and the kinetic coefficient k increases as the volume fraction increases. The shape of size distributions changes significantly with increasing volume fraction of the coarsening phase; the skewness changes continuously from negative to positive while the kurtosis decreases in the low fraction regime and increases in the high volume fraction regime.

Original languageEnglish (US)
Pages (from-to)1895-1907
Number of pages13
JournalActa Materialia
Volume50
Issue number8
DOIs
StatePublished - May 8 2002

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Polymers and Plastics
  • Metals and Alloys

Fingerprint Dive into the research topics of 'Phase-field simulation of 2-D Ostwald ripening in the high volume fraction regime'. Together they form a unique fingerprint.

  • Cite this