Abstract
A phase-field model for predicting the domain structure evolution in constrained ferroelectric thin films is developed. It employs an analytical elastic solution derived for a constrained film with arbitrary eigenstrain distributions. In particular, the model is applied to the domain structure evolution during a cubic→tetragonal proper ferroelectric phase transition. The effect of substrate constraint on the volume fractions of domain variants, domain-wall orientations, and domain shapes is studied. It is shown that the predicted results agree very well with existing experimental observations in ferroelectric thin films.
| Original language | English (US) |
|---|---|
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 652 |
| State | Published - Dec 1 2001 |
| Event | Infuences of Interface and Dislocation Behavior on Microstructure Evolution - Boston, MA, United States Duration: Nov 27 2000 → Nov 30 2000 |
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering